- 专利标题: Scan synchronous-write-through testing architectures for a memory device
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申请号: US17651595申请日: 2022-02-18
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公开(公告)号: US11734142B2公开(公告)日: 2023-08-22
- 发明人: Ming-Hung Chang , Atul Katoch , Chia-En Huang , Ching-Wei Wu , Donald G. Mikan, Jr. , Hao-I Yang , Kao-Cheng Lin , Ming-Chien Tsai , Saman M. I. Adham , Tsung-Yung Chang , Uppu Sharath Chandra
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: G06F11/263
- IPC分类号: G06F11/263 ; G06F1/10 ; G06F11/22 ; G06F11/267 ; G11C29/12 ; G11C29/32 ; G11C29/48
摘要:
An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device. The memory device thereafter passes through the serial input sequence of data or the parallel input sequence of data to provide an output sequence of data in the shift mode of operation or the capture mode of operation or passes through the serial input sequence of data to provide a serial output sequence of scan data in the scan mode of operation.
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