Memory device and compensation method therein

    公开(公告)号:US10522202B2

    公开(公告)日:2019-12-31

    申请号:US15960406

    申请日:2018-04-23

    Abstract: A circuit is disclosed that includes an inverter unit and a switch unit. The inverter unit is coupled to a memory cell column. The inverter unit is configured to invert, in response to a first control signal and a second control signal, a first signal and to output a second signal for the enabling or disabling of a bit line keeper circuit that is configured to maintain a bit line to a voltage. The first signal is generated by the memory cell column. The switch unit is configured to couple a reference voltage to an input of the inverter unit, in response to a third control signal. The inverter unit is further configured to be deactivated in response to the reference voltage, the first control signal, and the second control signal.

    Memory device with redundant IO circuit

    公开(公告)号:US09824780B2

    公开(公告)日:2017-11-21

    申请号:US15076416

    申请日:2016-03-21

    Inventor: Atul Katoch

    CPC classification number: G11C29/781 G11C2029/4402

    Abstract: A device includes input/output (IO) circuits, a redundant IO circuit and a redundant IO control unit. The input/output (IO) circuits coupled to a memory array. The redundant IO circuit is coupled to the memory array and the plurality of IO circuits. The redundant IO control unit is coupled to the IO circuits and the redundant IO circuit. In response to a failure column address signal, the redundant IO control unit configures the redundant IO circuit to substitute a failed IO circuit of the IO circuits. The redundant IO control unit includes a storage circuit, and during a shutdown mode, the storage circuit is configured to store the failure column address signal.

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