- 专利标题： Doping for semiconductor device with conductive feature
-
申请号： US17872452申请日： 2022-07-25
-
公开(公告)号： US11742386B2公开(公告)日： 2023-08-29
- 发明人: Su-Hao Liu , Huicheng Chang , Chia-Cheng Chen , Liang-Yin Chen , Kuo-Ju Chen , Chun-Hung Wu , Chang-Miao Liu , Huai-Tei Yang , Lun-Kuang Tan , Wei-Ming You
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 分案原申请号： US15797703 2017.10.30
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/08 ; H01L29/167 ; H01L29/78 ; H01L21/02 ; H01L21/285 ; H01L29/66 ; H01L21/265 ; H01L29/417
摘要：
The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.
公开/授权文献
- US20220367632A1 Doping for Semiconductor Device with Conductive Feature 公开/授权日：2022-11-17
信息查询
IPC分类:
