Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing
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Application No.: US17869591Application Date: 2022-07-20
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Publication No.: US11842896B2Publication Date: 2023-12-12
- Inventor: Hung-Jui Kuo , Hsing-Chieh Lee , Ming-Tan Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16527525 2019.07.31
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/038 ; G03F7/039 ; H01L21/027 ; G03F7/42 ; G03F7/075

Abstract:
A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.
Public/Granted literature
- US20220367177A1 Semiconductor Devices and Methods of Manufacturing Public/Granted day:2022-11-17
Information query
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