公开(公告)号：US20230064162A1

公开(公告)日：2023-03-02

申请号：US17461656

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Chieh Lee ,  Hung-Jui Kuo ,  Ming-Tan Lee ,  Ting Yi Lin

IPC: G03F7/004 ,  H01L23/00

Abstract: A semiconductor device and method of manufacturing a semiconductor device is disclosed herein including creating a photoresist mixture that includes a surfactant, and a base solvent; one or more boiling point modifying solvents having a boiling point higher in temperature than the base solvent; and one or more hydrophilicity modifying solvents that are more hydrophilic than the base solvent; depositing the photoresist mixture onto a substrate comprising a plurality of UBMLs using a wet film process; performing a pre-bake process to cure the photoresist; and patterning the photoresist.

公开(公告)号：US20240393685A1

公开(公告)日：2024-11-28

申请号：US18790692

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Chieh Lee ,  Hung-Jui Kuo ,  Ming-Tan Lee ,  Ting Yi Lin

IPC: G03F7/004 ,  G03F7/16 ,  H01L23/00

Abstract: A semiconductor device and method of manufacturing a semiconductor device is disclosed herein including creating a photoresist mixture that includes a surfactant, and a base solvent; one or more boiling point modifying solvents having a boiling point higher in temperature than the base solvent; and one or more hydrophilicity modifying solvents that are more hydrophilic than the base solvent; depositing the photoresist mixture onto a substrate comprising a plurality of UBMLs using a wet film process; and performing a pre-bake process to cure the photoresist mixture.

公开(公告)号：US20240079235A1

公开(公告)日：2024-03-07

申请号：US18500593

申请日：2023-11-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC: H01L21/027 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/42

CPC classification number: H01L21/0276 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/091 ,  G03F7/427

Abstract: A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti -reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

公开(公告)号：US11842896B2

公开(公告)日：2023-12-12

申请号：US17869591

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC: G03F7/09 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  G03F7/42 ,  G03F7/075

CPC classification number: H01L21/0276 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/091 ,  G03F7/427

Abstract: A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

公开(公告)号：US20220367177A1

公开(公告)日：2022-11-17

申请号：US17869591

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Jui Kuo ,  Hsing-Chieh Lee ,  Ming-Tan Lee

IPC: H01L21/027 ,  G03F7/42 ,  G03F7/09 ,  G03F7/075

Abstract: A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.