Invention Grant
- Patent Title: Internal voltage generation circuit of smart card and smart card including the same
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Application No.: US17232298Application Date: 2021-04-16
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Publication No.: US11893435B2Publication Date: 2024-02-06
- Inventor: Eunsang Jang , Junho Kim , Inhyuk Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. CHAU & ASSOCIATES, LLC
- Priority: KR 20200077690 2020.06.25 KR 20200108026 2020.08.26
- Main IPC: G05B19/00
- IPC: G05B19/00 ; G05B23/00 ; G06F7/00 ; G06F7/04 ; G06T1/00 ; G06T7/00 ; G08B29/00 ; G08C19/00 ; H04B1/00 ; H04B3/00 ; H04Q1/00 ; H04Q9/00 ; G06K19/07 ; G06K19/077 ; H02M3/335

Abstract:
An internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. The first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. The second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. The bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.
Public/Granted literature
- US20210406631A1 INTERNAL VOLTAGE GENERATION CIRCUIT OF SMART CARD AND SMART CARD INCLUDING THE SAME Public/Granted day:2021-12-30
Information query
IPC分类: