- 专利标题: Monolithic memory stack
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申请号: US16888910申请日: 2020-06-01
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公开(公告)号: US12058847B2公开(公告)日: 2024-08-06
- 发明人: Prashant Majhi , Abhishek A. Sharma , Charles Kuo , Brian S. Doyle , Urusa Shahriar Alaan , Van H Le , Elijah V. Karpov , Kaan Oguz , Arnab Sen Gupta
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Akona IP PC
- 主分类号: H10B12/00
- IPC分类号: H10B12/00 ; H01L25/065
摘要:
Embodiments may relate to a microelectronic package that includes a first plurality of memory cells of a first type coupled with a substrate. The microelectronic package may further include a second plurality of memory cells of a second type communicatively coupled with the substrate such that the first plurality of memory cells is between the substrate and the second plurality of memory cells. Other embodiments may be described or claimed.
公开/授权文献
- US20210375873A1 MONOLITHIC MEMORY STACK 公开/授权日:2021-12-02
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