Invention Grant
- Patent Title: Chamber architecture for epitaxial deposition and advanced epitaxial film applications
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Application No.: US17317363Application Date: 2021-05-11
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Publication No.: US12060651B2Publication Date: 2024-08-13
- Inventor: Tetsuya Ishikawa , Swaminathan T. Srinivasan , Kartik Bhupendra Shah , Ala Moradian , Manjunath Subbanna , Matthias Bauer , Peter Reimer , Michael R. Rice
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: C30B25/14
- IPC: C30B25/14 ; C23C16/44 ; C23C16/455 ; C23C16/458 ; C23C16/46 ; C23C16/48 ; C30B25/08 ; C30B25/10 ; C30B25/12 ; H01L21/67 ; H01L21/677

Abstract:
The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.
Public/Granted literature
- US20220364261A1 CHAMBER ARCHITECTURE FOR EPITAXIAL DEPOSITION AND ADVANCED EPITAXIAL FILM APPLICATIONS Public/Granted day:2022-11-17
Information query
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