公开(公告)号：US12060651B2

公开(公告)日：2024-08-13

申请号：US17317363

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Kartik Bhupendra Shah ,  Ala Moradian ,  Manjunath Subbanna ,  Matthias Bauer ,  Peter Reimer ,  Michael R. Rice

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67 ,  H01L21/677

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67115 ,  H01L21/67742 ,  C23C16/4411 ,  C23C16/4584 ,  C23C16/482 ,  H01L21/67748

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：US12091749B2

公开(公告)日：2024-09-17

申请号：US17317565

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Matthias Bauer ,  Manjunath Subbanna ,  Ala Moradian ,  Kartik Bhupendra Shah ,  Errol Antonio C Sanchez ,  Michael R. Rice ,  Peter Reimer ,  Marc Shull

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16

CPC classification number: C23C16/4408 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

公开(公告)号：US20240295048A1

公开(公告)日：2024-09-05

申请号：US18117318

申请日：2023-03-03

Applicant: Applied Materials, Inc.

Inventor： Shawn Thanhson Le ,  Amir H. Tavakoli ,  Ala Moradian ,  Tetsuya Ishikawa

IPC: C30B25/08 ,  C30B25/10

CPC classification number: C30B25/08 ,  C30B25/105

Abstract: Embodiments described herein generally relate to highly reflective metallic alloys for components (such as chamber components) of semiconductor processing equipment, and related methods and processing chambers. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body having an internal volume, and one or more heat sources configured to provide heat to the internal volume. The processing chamber includes an upper window and a lower window. The processing chamber includes one or more chamber components positioned to reflect energy emitted from the one or more heat sources through at least one of the upper window or the lower window and into the internal volume, the one or more chamber components comprising a metallic alloy and one or more reflective surfaces having a surface roughness (Ra) that is 5.0 nanometer or less.

公开(公告)号：US12018372B2

公开(公告)日：2024-06-25

申请号：US17317342

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Matthias Bauer ,  Ala Moradian ,  Manjunath Subbanna ,  Kartik Bhupendra Shah ,  Errol Antonio C. Sanchez ,  Sohrab Zokaei ,  Michael R. Rice ,  Peter Reimer

IPC: C23C16/40 ,  B01J4/00 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4558 ,  B01J4/005 ,  B01J4/008 ,  C23C16/4412 ,  C23C16/45587

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

公开(公告)号：US20230352322A1

公开(公告)日：2023-11-02

申请号：US17733685

申请日：2022-04-29

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Ala Moradian ,  Manjunath Subbanna ,  Kim Vellore ,  Matthew Miller ,  Michael Rice

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/46

CPC classification number: H01L21/67115 ,  C23C16/4586 ,  C23C16/46

Abstract: Embodiments disclosed herein include a lamp module for a semiconductor processing chamber. In an embodiment, the lamp module plate comprises a back plate, a first ring that extends from the back plate, a second ring that extends from the back plate, and a third ring that extends from the back plate. In an embodiment, the lamp module further comprises a first plurality of lamps between the first ring and the second ring, a second plurality of lamps between the second ring and the third ring, and a third plurality of lamps configured to emit infrared radiation that propagates into the third ring.