Invention Grant
- Patent Title: Method of depositing silicon nitride films
-
Application No.: US17285814Application Date: 2019-10-11
-
Publication No.: US12230495B2Publication Date: 2025-02-18
- Inventor: James S. Sims , Shane Tang , Vikrant Rai , Andrew McKerrow , Huatan Qiu
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Alleman Hall & Tuttle LLP
- International Application: PCT/US2019/055920 WO 20191011
- International Announcement: WO2020/081397 WO 20200423
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; H01J37/32 ; H01L21/67
Abstract:
A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.
Public/Granted literature
- US20210384028A1 METHOD OF DEPOSITING SILICON NITRIDE FILMS Public/Granted day:2021-12-09
Information query
IPC分类:
