Invention Application
US20010050387A1 Semiconductor non-volatile memory device and corresponding fabrication process
审中-公开
半导体非易失性存储器件及相应的制造工艺
- Patent Title: Semiconductor non-volatile memory device and corresponding fabrication process
- Patent Title (中): 半导体非易失性存储器件及相应的制造工艺
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Application No.: US09814177Application Date: 2001-03-21
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Publication No.: US20010050387A1Publication Date: 2001-12-13
- Inventor: Thomas Skotnicki , Didier Dutartre , Pascal Ribot , Maryse Paoli , Richard Fournel
- Applicant: STMicroelectronics S.A.
- Applicant Address: FR Gentilly
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Gentilly
- Priority: FR0003983 20000329
- Main IPC: H01L029/76
- IPC: H01L029/76
Abstract:
A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.
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