公开(公告)号：US20010050387A1

公开(公告)日：2001-12-13

申请号：US09814177

申请日：2001-03-21

Applicant: STMicroelectronics S.A.

Inventor： Thomas Skotnicki ,  Didier Dutartre ,  Pascal Ribot ,  Maryse Paoli ,  Richard Fournel

IPC: H01L029/76

CPC classification number: H01L29/66825 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/42336

Abstract: A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.

Abstract translation: 非易失性存储器包括在源极和漏极区域之间的衬底中延伸的浮动栅极。 通道区域可以被两个绝缘层限制。 本发明特别适用于使用CMOS技术的EPROM，EEPROM，闪存和单电子存储器。

公开(公告)号：US20030038315A1

公开(公告)日：2003-02-27

申请号：US10273925

申请日：2002-10-18

Applicant: STMicroelectronics S.A.

Inventor： Thomas Skotnicki ,  Didier Dutartre ,  Pascal Ribot ,  Maryse Paoli ,  Richard Fournel

IPC: H01L021/336 ,  H01L029/788

CPC classification number: H01L29/66825 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/42336

Abstract: A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.

Abstract translation: 非易失性存储器包括在源极和漏极区域之间的衬底中延伸的浮动栅极。 通道区域可以被两个绝缘层限制。 本发明特别适用于使用CMOS技术的EPROM，EEPROM，闪存和单电子存储器。