发明申请
- 专利标题： Method and apparatus for an improved baffle plate in a plasma processing system
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申请号： US10259380申请日： 2002-09-30
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公开(公告)号： US20040063333A1公开(公告)日： 2004-04-01
- 发明人: Hidehito Saigusa , Taira Takase , Kouji Mitsuhashi , Hiroyuki Nakayama
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L021/44
- IPC分类号： H01L021/44 ; H01L021/31 ; H01L021/469 ; H01L021/26 ; H01L021/324 ; H01L021/42 ; H01L021/477
摘要：
The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.