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    Method of cleaning a plasma processing apparatus
    2.
    发明申请
    Method of cleaning a plasma processing apparatus 审中-公开
    清洗等离子体处理装置的方法

    公开(公告)号：US20040216769A1

    公开(公告)日：2004-11-04

    申请号：US10854181

    申请日：2004-05-27

    申请人： TOKYO ELECTRON LIMITED

    发明人： Taira Takase ,  Nobuyuki Nagayama ,  Kouji Mitsuhashi ,  Hiroyuki Nakayama

    IPC分类号： B08B003/12

    CPC分类号： B08B7/04 ,  B24C1/003 ,  Y10S134/902

    摘要： There is provided a method of cleaning completely a deposit on the surface of the member to be cleaned, of a plasma processing apparatus without any damage of the coating which has been formed anodized coating or sprayed coating on the surface of the member to cleaned. The method of cleaning comprises a chemical cleaning step of dipping in an organic solvent (e.g. acetone) (a); and then a step blowing pressurized air so as to remove the deposit which has been peeled from a buffer plate (14) treated chemically (b); and then, of removing physically the deposit remained at the edges of the buffer plate (14) by blasting by using a CO2 blast apparatus (105), and f steps of dipping the buffer plate (14) in pure water (104), and imparting supersonic vibration to remove the deposit remaining on a buffer plate (14).

    摘要翻译： 提供了一种在待清洁的构件的表面上完全清洁等离子体处理设备的方法，而不会在被清洁的构件的表面上形成阳极氧化涂层或喷涂的涂层的任何损坏。 清洗方法包括浸渍在有机溶剂（例如丙酮）（a）中的化学清洗步骤; 然后一步吹入加压空气，以去除已经从化学处理的缓冲板（14）上剥离的沉积物（b）; 然后通过使用二氧化碳鼓风装置（105）进行喷砂而物理清除残留在缓冲板（14）的边缘处的沉积物，以及将缓冲板（14）浸入纯水（104）中的步骤，以及 施加超音速振动以去除残留在缓冲板（14）上的沉积物。

    Method and apparatus for an improved deposition shield in a plasma processing system
    3.
    发明申请
    Method and apparatus for an improved deposition shield in a plasma processing system 有权
    用于等离子体处理系统中改进的沉积屏蔽的方法和装置

    公开(公告)号：US20040060657A1

    公开(公告)日：2004-04-01

    申请号：US10259353

    申请日：2002-09-30

    申请人： TOKYO ELECTRON LIMITED

    发明人： Hidehito Saigusa ,  Taira Takase ,  Kouji Mitsuhashi ,  Hiroyuki Nakayama

    IPC分类号： H01L021/306

    CPC分类号： H01J37/32477 ,  Y10S156/916

    摘要： The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.

    摘要翻译： 本发明提出了一种用于围绕等离子体处理系统中的处理空间的改进的沉积屏蔽，其中沉积屏蔽的设计和制造有利地在处理空间中提供清洁的处理等离子体，同时具有基本上最小的沉积屏蔽侵蚀。

    Method of cleaning a plasma processing apparatus
    4.
    发明申请
    Method of cleaning a plasma processing apparatus 有权
    清洗等离子体处理装置的方法

    公开(公告)号：US20030172952A1

    公开(公告)日：2003-09-18

    申请号：US10385571

    申请日：2003-03-12

    申请人： TOKYO ELECTRON LIMITED

    发明人： Taira Takase ,  Nobuyuki Nagayama ,  Kouji Mitsuhashi ,  Hiroyuki Nakayama

    IPC分类号： B08B003/12

    CPC分类号： B08B7/04 ,  B24C1/003 ,  Y10S134/902

    摘要： There is provided a method of cleaning completely a deposit on the surface of the member to be cleaned, of a plasma processing apparatus without any damage of the coating which has been formed anodized coating or sprayed coating on the surface of the member to cleaned. The method of cleaning comprises a chemical cleaning step of dipping in an organic solvent (e.g. acetone) (a); and then a step blowing pressurized air so as to remove the deposit which has been peeled from a buffer plate (14) treated chemically (b); and then, of removing physically the deposit remained at the edges of the buffer plate (14) by blasting by using a CO2blast apparatus (105), and f steps of dipping the buffer plate (14) in pure water (104), and imparting supersonic vibration to remove the deposit remaining on a buffer plate (14).

    摘要翻译： 提供了一种在待清洁的构件的表面上完全清洁等离子体处理设备的方法，而不会在被清洁的构件的表面上形成阳极氧化涂层或喷涂的涂层的任何损坏。 清洗方法包括浸渍在有机溶剂（例如丙酮）（a）中的化学清洗步骤; 然后一步吹入加压空气，以去除已经从化学处理的缓冲板（14）上剥离的沉积物（b）; 然后，通过使用一种成像装置（105），通过喷砂来物理清除保留在缓冲板（14）的边缘的沉积物，以及将缓冲板（14）浸入纯水（104）中的步骤，并赋予 超音速振动以去除缓冲板（14）上剩余的沉积物。