发明申请
- 专利标题： Void-free damascene copper deposition process and means of monitoring thereof
- 专利标题（中）： 无空隙镶嵌铜沉积工艺及其监控手段
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申请号： US10615794申请日： 2003-07-10
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公开(公告)号： US20050006242A1公开(公告)日： 2005-01-13
- 发明人: Panayotis Andricacos , Dean Chung , Hariklia Deligianni , James Fluegel , Keith Kwietniak , Peter Locke , Darryl Restaino , Soon-Cheon Seo , Philippe Vereecken , Erick Walton
- 申请人： Panayotis Andricacos , Dean Chung , Hariklia Deligianni , James Fluegel , Keith Kwietniak , Peter Locke , Darryl Restaino , Soon-Cheon Seo , Philippe Vereecken , Erick Walton
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： C23C18/16
- IPC分类号： C23C18/16 ; C25D21/12 ; C25D21/18
摘要：
An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.
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