发明申请
- 专利标题： Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
- 专利标题（中）： 具有包含含有金属，硅和氧的绝缘膜的栅极绝缘膜结构的半导体器件及其制造方法
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申请号： US10915805申请日： 2004-08-11
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公开(公告)号： US20050006675A1公开(公告)日： 2005-01-13
- 发明人: Yoshitaka Tsunashima , Seiji Ihumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
- 申请人： Yoshitaka Tsunashima , Seiji Ihumiya , Yasumasa Suizu , Yoshio Ozawa , Kiyotaka Miyano , Masayuki Tanaka
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP2000-066960 20000310
- 主分类号： H01L21/283
- IPC分类号： H01L21/283 ; H01L21/28 ; H01L21/316 ; H01L21/336 ; H01L21/8234 ; H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L29/76 ; H01L31/062 ; B21D39/00 ; H01L31/119
摘要：
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.