发明申请
- 专利标题： Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics
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申请号： US10645675申请日： 2003-08-20
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公开(公告)号： US20050042885A1公开(公告)日： 2005-02-24
- 发明人: Lihua Li , Tsutomu Tanaka , Tzu-Fang Huang , Li-Qun Xia , Dian Sugiarto , Visweswaren Sivaramakrishnan , Peter Lee , Mario Silvetti
- 申请人： Lihua Li , Tsutomu Tanaka , Tzu-Fang Huang , Li-Qun Xia , Dian Sugiarto , Visweswaren Sivaramakrishnan , Peter Lee , Mario Silvetti
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/509 ; H01L21/312 ; H01L21/316 ; H01L21/768 ; H01L21/31 ; H01L21/469
摘要：
A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.
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