发明申请
- 专利标题： Semiconductor device and fabrication method thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US10948747申请日： 2004-09-24
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公开(公告)号： US20050133834A1公开(公告)日： 2005-06-23
- 发明人: Haruyuki Sorada , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
- 申请人： Haruyuki Sorada , Takeshi Takagi , Akira Inoue , Yoshio Kawashima
- 优先权： JP2003-333218 20030925
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/8234 ; H01L29/10 ; H01L29/51 ; H01L29/76 ; H01L29/78 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A semiconductor device of this invention includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a pair of source and drain electrodes respectively formed in regions of the semiconductor substrate situated on opposite sides of the gate electrode in a plan view; and a germanium-containing channel layer situated below the gate electrode to sandwich an gate insulator therebetween and intervening between the pair of source and drain electrodes, wherein a silicide layer forming at least a part of the source and drain electrodes has a lower germanium concentration than the channel layer.
公开/授权文献
- US07119417B2 Semiconductor device and fabrication method thereof 公开/授权日：2006-10-10
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