发明申请
- 专利标题： Semiconductor device, annealing method, annealing apparatus and display apparatus
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申请号： US11041413申请日： 2005-01-25
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公开(公告)号： US20050145845A1公开(公告)日： 2005-07-07
- 发明人: Masayuki Jyumonji , Masakiyo Matsumura , Yoshinobu Kimura , Mikihiko Nishitani , Masato Hiramatsu , Yukio Taniguchi , Fumiki Nakano , Hiroyuki Ogawa
- 申请人： Masayuki Jyumonji , Masakiyo Matsumura , Yoshinobu Kimura , Mikihiko Nishitani , Masato Hiramatsu , Yukio Taniguchi , Fumiki Nakano , Hiroyuki Ogawa
- 申请人地址： JP Yokohama-shi
- 专利权人： Advanced LCD Technologies Dev. Ctr. Co., Ltd
- 当前专利权人： Advanced LCD Technologies Dev. Ctr. Co., Ltd
- 当前专利权人地址： JP Yokohama-shi
- 优先权： JP2002-279608 20020925; JP2003-110861 20030415
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; B23K26/04 ; B23K26/06 ; B23K26/067 ; B23K26/073 ; B23K26/42 ; H01L21/20 ; H01L21/268 ; H01L21/336 ; H01L21/77 ; H01L29/04 ; H01L29/786 ; H01L29/76 ; H01L21/84
摘要：
The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.
公开/授权文献
- US07186602B2 Laser annealing method 公开/授权日：2007-03-06