Apparatus for forming a semiconductor thin film
    7.
    发明授权
    Apparatus for forming a semiconductor thin film 有权
    用于形成半导体薄膜的装置

    公开(公告)号:US07335261B2

    公开(公告)日:2008-02-26

    申请号:US11198656

    申请日:2005-08-05

    IPC分类号: C30B1/04

    摘要: Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

    摘要翻译: 公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。 该装置包括光源,用于均匀化发射光的强度分布的均质器,用于执行调幅的幅度调制装置,使得强度分布均匀化的光的振幅在 光向基层的相对运动的方向,用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统,用于 在由光照射的表面中提供低温点,以及衬底台,以相对于衬底移动光,从而使得能够在X和Y轴上进行扫描。