Invention Application
- Patent Title: Method of forming nano-sized MTJ cell without contact hole
- Patent Title (中): 形成无接触孔的纳米尺寸MTJ电池的方法
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Application No.: US11033830Application Date: 2005-01-13
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Publication No.: US20050158882A1Publication Date: 2005-07-21
- Inventor: Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
- Applicant: Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
- Applicant Address: KR Swon-si
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Swon-si
- Priority: KR10-2004-0003237 20040116
- Main IPC: H01L21/28
- IPC: H01L21/28 ; G11C11/15 ; G11C11/16 ; H01L21/8246 ; H01L27/10 ; H01L27/105 ; H01L43/00 ; H01L43/08 ; H01L43/12
Abstract:
Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.
Public/Granted literature
- US07220601B2 Method of forming nano-sized MTJ cell without contact hole Public/Granted day:2007-05-22
Information query
IPC分类:
