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    Magnetic tunnel junction structures and methods of fabrication
    2.
    发明授权
    Magnetic tunnel junction structures and methods of fabrication 有权
    磁隧道结结构和制造方法

    公开(公告)号：US07504266B2

    公开(公告)日：2009-03-17

    申请号：US11141057

    申请日：2005-06-01

    Applicant: Kyu-Mann Lee ,  Hyun-Jo Kim ,  Jeong-Hee Park ,  Tae-Wan Kim ,  I-Hun Song ,  Seok-Jae Chung

    Inventor： Kyu-Mann Lee ,  Hyun-Jo Kim ,  Jeong-Hee Park ,  Tae-Wan Kim ,  I-Hun Song ,  Seok-Jae Chung

    IPC: H01L21/00

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  H01L43/08

    Abstract: A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and having reduced surface roughness to improve the hysteresis loop characteristics of the resulting MTJ structure. The bottom electrode layer may also combine the functions of both the seeding layer and bottom electrode of the conventional two-layer structure, thereby simplifying the manufacturing process.

    Abstract translation: 一种适用于具有包括铂，钌，铱，铑，锇，钯或其氧化物层的底部电极的MRAM器件的MTJ结构的方法，并且具有降低的表面粗糙度以改善所得到的磁滞回线特性 MTJ结构。 底部电极层也可以组合常规双层结构的接合层和底部电极的功能，从而简化了制造过程。

    Method of etching a metal oxide layer
    5.
    发明申请
    Method of etching a metal oxide layer 审中-公开
    蚀刻金属氧化物层的方法

    公开(公告)号：US20080164238A1

    公开(公告)日：2008-07-10

    申请号：US11987738

    申请日：2007-12-04

    Applicant: Seok-jae Chung ,  Soon-won Hwang ,  Jung-hyun Lee ,  Yeon-hee Kim

    Inventor： Seok-jae Chung ,  Soon-won Hwang ,  Jung-hyun Lee ,  Yeon-hee Kim

    IPC: B44C1/22

    CPC classification number: C23G5/00 ,  H01J37/321 ,  H01L21/32136 ,  H01L28/40 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

    Abstract: A method of etching a metal oxide layer formed on a metal layer is provided. The method includes mounting a specimen having the metal oxide layer and a photoresist on the metal oxide layer in a reaction chamber, wherein the metal oxide layer is formed on the metal layer and a pattern is formed on the photoresist. Primary etching of the metal oxide layer exposed by the photoresist may be performed using Cl2 gas in an inductively coupled plasma method. Secondary etching of residues remaining on an etched region of the metal oxide layer may be performed using BCl3 gas in the inductively coupled plasma method.

    Abstract translation: 提供了蚀刻形成在金属层上的金属氧化物层的方法。 该方法包括在反应室中将具有金属氧化物层和光致抗蚀剂的试样安装在金属氧化物层上，其中在金属层上形成金属氧化物层，在光刻胶上形成图案。 用光致抗蚀剂曝光的金属氧化物层的主蚀刻可以使用Cl 2气体以电感耦合等离子体方法进行。 残留在金属氧化物层的蚀刻区域上的残留物的二次蚀刻可以使用感应耦合等离子体方法中的BCl 3气体进行。

    Method of etching a nickel oxide layer and method of manufacturing a storage node
    6.
    发明申请
    Method of etching a nickel oxide layer and method of manufacturing a storage node 审中-公开
    蚀刻氧化镍层的方法和制造存储节点的方法

    公开(公告)号：US20080087635A1

    公开(公告)日：2008-04-17

    申请号：US11907091

    申请日：2007-10-09

    Applicant: Soon-won Hwang ,  Jung-hyun Lee ,  Seok-jae Chung

    Inventor： Soon-won Hwang ,  Jung-hyun Lee ,  Seok-jae Chung

    IPC: B44C1/22

    CPC classification number: H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

    Abstract: An etching method of a nickel oxide layer and a method of manufacturing a storage node of a resistive memory including the nickel oxide layer are provided. The method of etching the nickel oxide layer includes forming a nickel oxide layer on a substrate, forming a mask pattern on a desired region of the nickel oxide layer, removing the nickel oxide layer around the mask pattern using plasma generated from a mixed etching gas having a desired ratio of a main gas and an additive gas and removing the mask pattern.

    Abstract translation: 提供了氧化镍层的蚀刻方法以及制造包含氧化镍层的电阻式存储器的存储节点的方法。 蚀刻氧化镍层的方法包括在基板上形成氧化镍层，在氧化镍层的期望区域上形成掩模图案，使用从具有 主气体和添加气体的期望比例，并去除掩模图案。

    Method of forming nano-sized MTJ cell without contact hole
    7.
    发明授权
    Method of forming nano-sized MTJ cell without contact hole 有权
    形成无接触孔的纳米尺寸MTJ电池的方法

    公开(公告)号：US07220601B2

    公开(公告)日：2007-05-22

    申请号：US11033830

    申请日：2005-01-13

    Applicant: Soon-won Hwang ,  I-hun Song ,  Geun-young Yeom ,  Seok-jae Chung

    Inventor： Soon-won Hwang ,  I-hun Song ,  Geun-young Yeom ,  Seok-jae Chung

    IPC: H01L21/00

    CPC classification number: H01L43/12 ,  G11C11/16

    Abstract: Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.

    Abstract translation: 提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。 形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面 通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

    Method of forming nano-sized MTJ cell without contact hole
    10.
    发明授权
    Method of forming nano-sized MTJ cell without contact hole 有权
    形成无接触孔的纳米尺寸MTJ电池的方法

    公开(公告)号：US07397099B2

    公开(公告)日：2008-07-08

    申请号：US11710475

    申请日：2007-02-26

    Applicant: Soon-won Hwang ,  I-hun Song ,  Geun-young Yeom ,  Seok-jae Chung

    Inventor： Soon-won Hwang ,  I-hun Song ,  Geun-young Yeom ,  Seok-jae Chung

    IPC: H01L29/82

    CPC classification number: H01L43/12 ,  G11C11/16

    Abstract: Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.

    Abstract translation: 提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。 形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面 通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

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