发明申请
- 专利标题： Semiconductor device, apparatus and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11110933申请日： 2005-04-21
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公开(公告)号： US20050186767A1公开(公告)日： 2005-08-25
- 发明人: Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
- 申请人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
- 优先权： JP2003-032426 20030210
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; C23C14/08 ; C23C14/58 ; C23C16/00 ; H01L21/00 ; H01L21/02 ; H01L21/20 ; H01L21/26 ; H01L21/768 ; H01L21/8234 ; H01L21/8246 ; H01L23/58 ; H01L27/105 ; H01L27/115 ; H01L29/417 ; H01L29/76 ; H01L31/062
摘要：
An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
公开/授权文献
- US07259094B2 Apparatus and method for heat treating thin film 公开/授权日：2007-08-21
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