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发明申请
US20050194622A1 Nonvolatile capacitor of a semiconductor device, semiconductor memory device including the capacitor, and method of operating the same 审中-公开
半导体器件的非易失性电容器，包括该电容器的半导体存储器件及其操作方法

Nonvolatile capacitor of a semiconductor device, semiconductor memory device including the capacitor, and method of operating the same
摘要：
In a capacitor of a semiconductor device, a semiconductor memory device including the capacitor, and a method of operating the semiconductor memory device, the capacitor includes a lower electrode, a dielectric layer stacked on the lower electrode, the dielectric layer including a phase-transition layer capable of exhibiting two different resistance characteristics depending on whether an insulating property thereof has been changed, and an upper electrode stacked on the dielectric layer.
摘要（中）：

在半导体器件的电容器中，包括电容器的半导体存储器件以及半导体存储器件的操作方法，电容器包括下电极，堆叠在下电极上的电介质层，电介质层包括相转变 层，其能够根据其绝缘性是否变化而呈现出两种不同的电阻特性，以及堆叠在电介质层上的上电极。

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