发明申请
US20050241571A1 Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same
审中-公开
在硅衬底上生长氮化物单晶的方法，使用其的氮化物半导体发光器件，其制造方法
- 专利标题： Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same
- 专利标题（中）： 在硅衬底上生长氮化物单晶的方法，使用其的氮化物半导体发光器件，其制造方法
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申请号： US11007206申请日： 2004-12-09
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公开(公告)号： US20050241571A1公开(公告)日： 2005-11-03
- 发明人: Min Kim , Masayoshi Koike , Hun Hahm
- 申请人： Min Kim , Masayoshi Koike , Hun Hahm
- 申请人地址： KR Suwon
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Suwon
- 优先权： KR2004-29477 20040428
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; C23C16/34 ; C30B25/00 ; C30B25/02 ; C30B25/18 ; H01L21/20 ; H01L21/205 ; H01L33/06 ; H01L33/12 ; H01L33/32 ; H01L33/34
摘要：
A method of growing a nitride single crystal layer, and a method of manufacturing a light emitting device using the method are disclosed. The method of growing a nitride single crystal layer comprises the steps of preparing a silicon substrate having an upper surface of a crystal plane (111), forming a buffer layer having the formula of SixGe1-x, (where 0