发明申请
- 专利标题: Method and apparatus for fabricating metal layer
- 专利标题(中): 金属层制造方法及装置
-
申请号: US10833154申请日: 2004-04-28
-
公开(公告)号: US20050245072A1公开(公告)日: 2005-11-03
- 发明人: Hsien-Ming Lee , Jing-Cheng Lin , Shing-Chyang Pan , Ming-Hsing Tsai , Hung-Wen Su , Shih-Wei Chou , Shau-Lin Shue , Kuo-Wei Cheng , Ting-Chu Ko
- 申请人: Hsien-Ming Lee , Jing-Cheng Lin , Shing-Chyang Pan , Ming-Hsing Tsai , Hung-Wen Su , Shih-Wei Chou , Shau-Lin Shue , Kuo-Wei Cheng , Ting-Chu Ko
- 主分类号: H01L21/288
- IPC分类号: H01L21/288 ; H01L21/4763 ; H01L21/76 ; H01L21/768
摘要:
A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle θ less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.
公开/授权文献
- US07226860B2 Method and apparatus for fabricating metal layer 公开/授权日:2007-06-05
信息查询
IPC分类: