发明申请
- 专利标题： Method of depositing low k films
- 专利标题（中）： 沉积低k膜的方法
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申请号： US10765361申请日： 2004-01-27
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公开(公告)号： US20050260864A1公开(公告)日： 2005-11-24
- 发明人: Tzu-Fang Huang , Yung-Cheng Lu , Li-Qun Xia , Ellie Yieh , Wai-Fan Yau , David Cheung , Ralf Willecke , Kuowei Liu , Ju-Hyung Lee , Farhad Moghadam , Yeming Ma
- 申请人： Tzu-Fang Huang , Yung-Cheng Lu , Li-Qun Xia , Ellie Yieh , Wai-Fan Yau , David Cheung , Ralf Willecke , Kuowei Liu , Ju-Hyung Lee , Farhad Moghadam , Yeming Ma
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： C23C16/04
- IPC分类号： C23C16/04 ; C23C16/40 ; H01L21/316 ; H01L21/469 ; H01L21/768 ; H01L23/522
摘要：
A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
公开/授权文献
- US07160821B2 Method of depositing low k films 公开/授权日：2007-01-09
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