公开(公告)号：US20050260864A1

公开(公告)日：2005-11-24

申请号：US10765361

申请日：2004-01-27

申请人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David Cheung ,  Ralf Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad Moghadam ,  Yeming Ma

发明人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David Cheung ,  Ralf Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad Moghadam ,  Yeming Ma

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1031

摘要： A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

摘要翻译： 氧化硅层通过有机硅化合物的等离子体增强分解产生，以沉积碳原子量至少为1％的膜。 可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。 可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

公开(公告)号：US20050191846A1

公开(公告)日：2005-09-01

申请号：US11087393

申请日：2005-03-22

申请人： David Cheung ,  Wai-Fan Yau ,  Robert Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Poon

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

公开(公告)号：US08603895B1

公开(公告)日：2013-12-10

申请号：US13610263

申请日：2012-09-11

申请人： Frank Jakubowski ,  Joerg Radecker ,  Ralf Willecke

发明人： Frank Jakubowski ,  Joerg Radecker ,  Ralf Willecke

IPC分类号： H01L21/76

CPC分类号： H01L21/76232

摘要： In one example, the method includes forming a patterned etch mask above a semiconducting substrate, performing an etching process through the patterned etch mask to thereby form a trench in the substrate, performing a first deposition process to form a first layer of insulating material above the patterned etch mask and in the trench, and performing an etching process on the first layer of insulating material such that the post-etch thickness of the first layer of insulating material is less than an as-deposited thickness of the first layer of insulating material. The method also includes performing a second deposition process to form a second layer of insulating material on the etched first layer of insulating material, wherein the second layer of insulating material overfills the trench, and removing portions of the etched first layer of insulating material and the second layer of insulating material positioned above the patterned etch mask.

摘要翻译： 在一个示例中，该方法包括在半导体衬底上形成图案化蚀刻掩模，通过图案化蚀刻掩模执行蚀刻工艺，从而在衬底中形成沟槽，执行第一沉积工艺以形成第一层绝缘材料 图案化的蚀刻掩模和在沟槽中，并且对第一绝缘材料层进行蚀刻处理，使得第一绝缘材料层的后蚀刻厚度小于第一绝缘材料层的沉积厚度。 该方法还包括执行第二沉积工艺以在蚀刻的第一绝缘材料层上形成第二绝缘材料层，其中第二绝缘材料层超过沟槽，以及去除蚀刻的第一绝缘材料层的部分和 位于图案化蚀刻掩模上方的第二绝缘材料层。

公开(公告)号：US20050274955A1

公开(公告)日：2005-12-15

申请号：US10857150

申请日：2004-05-28

申请人： Tae Kim ,  Jin Zhao ,  Nathan Kruse ,  August Fischer ,  Ralf Willecke

发明人： Tae Kim ,  Jin Zhao ,  Nathan Kruse ,  August Fischer ,  Ralf Willecke

IPC分类号： H01L21/30 ,  H01L21/768

CPC分类号： H01L21/76801 ,  H01L21/76822 ,  H01L21/76832

摘要： A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.

摘要翻译： 一种在集成电路中形成膜堆叠的方法，所述方法包括在第一绝缘材料层附近淀积一层碳化硅，在该碳化硅层附近沉积一层氮化硅，以及沉积第二层介电材料 邻近氮化硅层。

公开(公告)号：US20070134918A1

公开(公告)日：2007-06-14

申请号：US11678967

申请日：2007-02-26

申请人： Tae Kim ,  Jin Zhao ,  Nathan Kruse ,  August Fischer ,  Ralf Willecke

发明人： Tae Kim ,  Jin Zhao ,  Nathan Kruse ,  August Fischer ,  Ralf Willecke

IPC分类号： H01L21/4763

CPC分类号： H01L21/76801 ,  H01L21/76822 ,  H01L21/76832

摘要： A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.

摘要翻译： 一种在集成电路中形成膜堆叠的方法，所述方法包括在第一绝缘材料层附近淀积一层碳化硅，在该碳化硅层附近沉积一层氮化硅，以及沉积第二层介电材料 邻近氮化硅层。

公开(公告)号：US20050090087A1

公开(公告)日：2005-04-28

申请号：US10977433

申请日：2004-10-29

申请人： Jiong-Ping Lu ,  Glenn Tessmer ,  Melissa Hewson ,  Donald Miles ,  Ralf Willecke ,  Andrew McKerrow ,  Brian Kirkpatrick ,  Clinton Montgomery

发明人： Jiong-Ping Lu ,  Glenn Tessmer ,  Melissa Hewson ,  Donald Miles ,  Ralf Willecke ,  Andrew McKerrow ,  Brian Kirkpatrick ,  Clinton Montgomery

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/3211 ,  H01L21/76834 ,  H01L29/665

摘要： A process for forming nickel silicide and silicon nitride structure in a semiconductor integrated circuit device is described. Good adhesion between the nickel silicide and the silicon nitride is accomplished by passivating the nickel silicide surface with nitrogen. The passivation may be performed by treating the nickel silicide surface with plasma activated nitrogen species. An alternative passivation method is to cover the nickel silicide with a film of metal nitride and heat the substrate to about 500° C. Another alternative method is to sputter deposit silicon nitride on top of nickel silicide.

摘要翻译： 描述了在半导体集成电路器件中形成硅化镍和氮化硅结构的工艺。 通过用氮气钝化硅化镍表面，可以实现硅化镍和氮化硅之间的良好粘附。 可以通过用等离子体活化的氮物种处理硅化镍表面来进行钝化。 替代的钝化方法是用金属氮化物膜覆盖硅化镍，并将衬底加热至约500℃。另一种替代方法是在硅化镍顶部溅射沉积氮化硅。