发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US11051643申请日： 2005-01-27
-
公开(公告)号： US20050285173A1公开(公告)日： 2005-12-29
- 发明人: Kouichi Nagai , Hideaki Kikuchi , Naoya Sashida , Yasutaka Ozaki
- 申请人： Kouichi Nagai , Hideaki Kikuchi , Naoya Sashida , Yasutaka Ozaki
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2004-189365 20040628; JP2004-330438 20041115
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/31 ; H01L21/469 ; H01L21/8234 ; H01L21/8242 ; H01L21/8244 ; H01L21/8246 ; H01L23/48 ; H01L23/52 ; H01L27/06 ; H01L27/108 ; H01L27/115 ; H01L29/40 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要：
The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.