公开(公告)号：US07598557B2

公开(公告)日：2009-10-06

申请号：US11051643

申请日：2005-01-27

申请人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

发明人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L21/02063 ,  H01L27/0688 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/57

摘要： The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.

摘要翻译： 半导体器件包括形成在半导体衬底10上的第一绝缘膜26，埋在第一接触孔28a中的第一导体插塞32，第一接触孔28a形成在源极/漏极扩散层22上，形成在第一绝缘膜26上的电容器44 在第一绝缘膜26上形成的覆盖电容器44的第一氢扩散防止膜48，形成在第一氢扩散防止膜上并具有表面平坦化的第二绝缘膜50，形成在第一氢上的第二氢扩散防止膜52 具有表面平坦化的扩散防止膜26，形成在第二绝缘膜50上的第二氢扩散防止膜52，埋在第二接触孔56中的第二导体插塞62，第二接触孔56形成在下电极38或下电极38的上电极42 电容器44，埋在第一接触孔58中的第三导体插头62，并形成在第一导体插塞32的下方 连接到第二导体插头62或第三导体插头62的部分64。

公开(公告)号：US20090278231A1

公开(公告)日：2009-11-12

申请号：US12458496

申请日：2009-07-14

申请人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

发明人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L27/11502 ,  H01L21/02063 ,  H01L27/0688 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/57

摘要： The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.

摘要翻译： 半导体器件包括形成在半导体衬底10上的第一绝缘膜26，埋在第一接触孔28a中的第一导体插塞32，第一接触孔28a形成在源极/漏极扩散层22上，形成在第一绝缘膜26上的电容器44 在第一绝缘膜26上形成的覆盖电容器44的第一氢扩散防止膜48，形成在第一氢扩散防止膜上并具有表面平坦化的第二绝缘膜50，形成在第一氢上的第二氢扩散防止膜52 具有表面平坦化的扩散防止膜26，形成在第二绝缘膜50上的第二氢扩散防止膜52，埋在第二接触孔56中的第二导体插塞62，第二接触孔56形成在下电极38或下电极38的上电极42 电容器44，埋在第一接触孔58中的第三导体插头62，并形成在第一导体插塞32的下方 连接到第二导体插头62或第三导体插头62的部分64。

公开(公告)号：US20050285173A1

公开(公告)日：2005-12-29

申请号：US11051643

申请日：2005-01-27

申请人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

发明人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

IPC分类号： H01L21/02 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8246 ,  H01L23/48 ,  H01L23/52 ,  H01L27/06 ,  H01L27/108 ,  H01L27/115 ,  H01L29/40 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L21/02063 ,  H01L27/0688 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/57

摘要： The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.

摘要翻译： 半导体器件包括形成在半导体衬底10上的第一绝缘膜26，埋在第一接触孔28a中的第一导体插塞32，其形成在源极/漏极扩散层22上，形成在第一绝缘膜26上的电容器44， 形成在第一绝缘膜26上的覆盖电容器44的第一氢扩散防止膜48，形成在第一氢扩散防止膜上并具有表面平坦化的第二绝缘膜50，形成在第一绝缘膜52上的第二防止氢扩散膜52 表面被平坦化的氢扩散防止膜26，形成在第二绝缘膜50上的第二氢扩散防止膜52，埋在第二接触孔56中的第二导体插塞62，第二接触孔56形成在下电极38或上电极42 电容器44，埋在第一接线孔58中的第三导体插头62，并形成在第一导体插头32上 连接64连接到第二导体插头62或第三导体插头62。

公开(公告)号：US06509593B2

公开(公告)日：2003-01-21

申请号：US09750069

申请日：2000-12-29

申请人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

发明人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

摘要翻译： 通过在绝缘膜上形成接触孔而形成的半导体器件，其通过相同的步骤在电容器的下电极上覆盖MOSFET的源极/漏极和存储单元区域中的电容器，然后将插头填充到触点中 孔，然后在电容器的上电极上形成接触孔。 因此，可以提供具有铁电电容器的半导体器件，其能够通过抑制在晶体管上形成的电容器的损坏来简化与电容器的上部电极和下部电极的各个布线连接结构。

公开(公告)号：US06913970B2

公开(公告)日：2005-07-05

申请号：US10303752

申请日：2002-11-26

申请人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

发明人： Kenichi Inoue ,  Yoshinori Obata ,  Takeyasu Saito ,  Kaoru Saigoh ,  Naoya Sashida ,  Koji Tani ,  Jirou Miura ,  Tatsuya Yokota ,  Satoru Mihara ,  Yukinobu Hikosaka ,  Yasutaka Ozaki

IPC分类号： H01L23/522 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L21/20

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L27/11507 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

摘要翻译： 通过在绝缘膜上形成接触孔而形成的半导体器件，其通过相同的步骤在电容器的下电极上覆盖MOSFET的源/漏和存储单元区域中的电容器，然后将插头填充到接触孔 ，然后在电容器的上电极上形成接触孔。 因此，可以提供具有铁电电容器的半导体器件，其能够通过抑制在晶体管上形成的电容器的损坏来简化与电容器的上部电极和下部电极的各个布线连接结构。

公开(公告)号：US08507965B2

公开(公告)日：2013-08-13

申请号：US12896231

申请日：2010-10-01

申请人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

发明人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L2924/19041

摘要： An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

公开(公告)号：US20110012230A1

公开(公告)日：2011-01-20

申请号：US12896231

申请日：2010-10-01

申请人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

发明人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

IPC分类号： H01L29/92

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L2924/19041

摘要： An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

摘要翻译： 在形成铁电电容器（23）之后，通过高密度等离子体CVD法，大气压CVD法等形成具有逐渐倾斜的表面的绝缘膜（24）。 此后，在绝缘膜（24）上形成氧化铝膜（25）。 根据该方法，氧化铝膜（25）的低覆盖率不成为问题，铁电电容器（23）被可靠地保护。

公开(公告)号：US20090160023A1

公开(公告)日：2009-06-25

申请号：US12379488

申请日：2009-02-24

申请人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

发明人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

IPC分类号： H01L29/92 ,  H01L21/02 ,  H01L23/58 ,  H01L21/31

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L2924/19041

摘要： An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

公开(公告)号：US20050212020A1

公开(公告)日：2005-09-29

申请号：US11133266

申请日：2005-05-20

申请人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

发明人： Kazutoshi Izumi ,  Hitoshi Saito ,  Naoya Sashida ,  Kaoru Saigoh ,  Kouichi Nagai

IPC分类号： H01L21/8246 ,  H01L27/115 ,  H01L29/76

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L2924/19041

摘要： An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

摘要翻译： 在形成铁电电容器（23）之后，通过高密度等离子体CVD法，大气压CVD法等形成具有逐渐倾斜的表面的绝缘膜（24）。 此后，在绝缘膜（24）上形成氧化铝膜（25）。 根据该方法，氧化铝膜（25）的低覆盖率不成为问题，铁电电容器（23）被可靠地保护。

公开(公告)号：US08558294B2

公开(公告)日：2013-10-15

申请号：US12126357

申请日：2008-05-23

申请人： Naoya Sashida

发明人： Naoya Sashida

IPC分类号： H01L27/105

CPC分类号： H01L27/11507 ,  H01L28/57

摘要： A semiconductor device includes a semiconductor substrate formed with an active element, an oxidation resistant film formed over the semiconductor substrate so as to cover the active element, a ferroelectric capacitor formed over the oxidation resistance film, the ferroelectric capacitor having a construction of consecutively stacking a lower electrode, a ferroelectric film and an upper electrode, and an interlayer insulation film formed over the oxidation resistance film so as to cover the ferroelectric capacitor, wherein there are formed, in the interlayer insulation film, a first via-plug in a first contact hole exposing the first electrode and a second via-plug in a second contact hole exposing the lower electrode, and wherein there is formed another conductive plug in the interlayer insulation film in an opening exposing the oxidation resistant film.

摘要翻译： 半导体器件包括形成有活性元件的半导体衬底，形成在半导体衬底上以覆盖有源元件的抗氧化膜，在抗氧化膜上形成的铁电电容器，具有连续层叠结构的铁电电容器 下电极，铁电体膜和上电极，以及层间绝缘膜，形成在所述抗氧化膜上以覆盖所述铁电电容器，其中在所述层间绝缘膜中形成有第一触点中的第一通孔 在暴露下电极的第二接触孔中露出第一电极和第二通孔的孔，并且其中在暴露抗氧化膜的开口中在层间绝缘膜中形成另一个导电插塞。