发明申请
- 专利标题： High dielectric capacitor materials and method of their production
- 专利标题（中）： 高介电电容材料及其制作方法
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申请号： US11713783申请日： 2007-03-05
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公开(公告)号： US20080218940A1公开(公告)日： 2008-09-11
- 发明人: Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
- 申请人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
- 申请人地址： US CA Los Angeles
- 专利权人： Northrop Grumman Systems Corporation
- 当前专利权人： Northrop Grumman Systems Corporation
- 当前专利权人地址： US CA Los Angeles
- 主分类号： H01G5/013
- IPC分类号： H01G5/013 ; C01F11/02 ; C01F17/00 ; C01G23/00 ; C01G3/02 ; H01G5/011
摘要：
Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
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