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公开(公告)号：US07830644B2
公开(公告)日：2010-11-09
申请号：US11713783
申请日：2007-03-05
申请人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
发明人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
CPC分类号： C01G23/002 , C01P2002/34 , C01P2002/72 , C01P2006/40 , C04B35/462 , C04B2235/3208 , C04B2235/3227 , C04B2235/3281 , H01G4/105 , H01G4/1209 , H01G4/1218 , H01G4/306
摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaCu 3 Ti 4 O 12或La 3 Ga 5 SiO 4的电介质。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善的结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器
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公开(公告)号：US20080218940A1
公开(公告)日：2008-09-11
申请号：US11713783
申请日：2007-03-05
申请人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
发明人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
CPC分类号： C01G23/002 , C01P2002/34 , C01P2002/72 , C01P2006/40 , C04B35/462 , C04B2235/3208 , C04B2235/3227 , C04B2235/3281 , H01G4/105 , H01G4/1209 , H01G4/1218 , H01G4/306
摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaC 3 3 Ti 4 O 12或La 3 N 3的电介质 > 5 SiO 4。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器
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公开(公告)号：US09570646B2
公开(公告)日：2017-02-14
申请号：US14185567
申请日：2014-02-20
申请人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
发明人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
IPC分类号： H01L31/107 , H01L31/0336 , H01L31/0232 , H01L27/144 , H01L31/18
CPC分类号： H01L31/1075 , H01L27/1443 , H01L27/1446 , H01L31/02327 , H01L31/0336 , H01L31/035227 , H01L31/18
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。
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公开(公告)号：US10211359B2
公开(公告)日：2019-02-19
申请号：US15356152
申请日：2016-11-18
申请人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
发明人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
IPC分类号： H01L31/107 , H01L31/0336 , H01L31/0232 , H01L27/144 , H01L31/18 , H01L31/0352
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
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公开(公告)号：US07855108B2
公开(公告)日：2010-12-21
申请号：US12713753
申请日：2010-02-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： H01L21/338
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
摘要翻译： 可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。 掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。 使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。
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公开(公告)号：US07683400B1
公开(公告)日：2010-03-23
申请号：US11474398
申请日：2006-06-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： H01L29/08
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
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公开(公告)号：US20100192840A1
公开(公告)日：2010-08-05
申请号：US12713753
申请日：2010-02-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： C30B23/02
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
摘要翻译： 可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。 掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。 使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。
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8.发明申请公开(公告)号：US20090220801A1
公开(公告)日：2009-09-03
申请号：US12040785
申请日：2008-02-29
申请人： Brian Wagner , Travis J. Randall , Thomas J. Knight , David J. Knuteson , David Kahler , Andre E. Berghmans , Sean R. McLaughlin , Narsingh B. Singh , Mark Usefara
发明人： Brian Wagner , Travis J. Randall , Thomas J. Knight , David J. Knuteson , David Kahler , Andre E. Berghmans , Sean R. McLaughlin , Narsingh B. Singh , Mark Usefara
摘要： The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.
摘要翻译： 本公开涉及使用溅射技术生长高纯度6H SiC单晶的方法和装置。 在一个实施方案中，本公开涉及一种用于在基底上沉积高纯度6H-SiC单晶膜的方法，所述方法包括：提供具有蚀刻表面的硅衬底; 将衬底和SiC源放置在沉积室中; 在沉积室中达到第一真空度; 用气体对腔室加压; 通过以下方式将SiC膜直接沉积在蚀刻的硅衬底上：使用沉积室中的低能量等离子体将衬底加热到低于硅熔点的温度; 以及在衬底的蚀刻表面上沉积一层六方形的SiC膜。
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公开(公告)号：US07327896B1
公开(公告)日：2008-02-05
申请号：US10940638
申请日：2004-09-15
IPC分类号： G06K9/40
CPC分类号： G01J3/28 , G01J3/00 , G01J3/1256 , G01J2003/1286 , G01N2021/1793
摘要： A hyperspectral imaging system is tested in the lab to allow a determination of its response to the emission from a simulated target, of certain wavelengths of radiation which the imaging system will be using during target determination. A broadband IR wavelength generator is used to generate a multiplicity of wavelengths representing the target and an emissions simulator is used to generate wavelengths representing target emission of hot gases. An AOTF is used to delete one or more target wavelengths, and to add one or more emission wavelengths, from and to the transmission path to the imaging system.
摘要翻译： 在实验室中测试高光谱成像系统，以便确定其对来自模拟目标的辐射的响应，该目标是在目标确定期间成像系统将使用的某些波长的辐射。 使用宽带IR波长发生器来产生表示目标的多个波长，并且使用发射模拟器来产生表示热气体的目标发射的波长。 AOTF用于从成像系统中删除一个或多个目标波长，并向传输路径添加一个或多个发射波长。
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公开(公告)号：US08278666B1
公开(公告)日：2012-10-02
申请号：US12821877
申请日：2010-06-23
申请人： Narsingh B. Singh , Sean R. McLaughlin , Thomas J. Knight , Robert M. Young , Brian P. Wagner , David A. Kahler , Andre E. Berghmans , David J. Knuteson , Ty R. McNutt , Jerry W. Hedrick, Jr. , George M. Bates , Kenneth Petrosky
发明人： Narsingh B. Singh , Sean R. McLaughlin , Thomas J. Knight , Robert M. Young , Brian P. Wagner , David A. Kahler , Andre E. Berghmans , David J. Knuteson , Ty R. McNutt , Jerry W. Hedrick, Jr. , George M. Bates , Kenneth Petrosky
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L21/02381 , C30B23/02 , C30B25/02 , C30B25/183 , C30B29/36 , C30B29/403 , H01L21/02447 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.
摘要翻译： 本公开涉及高纯度2H-SiC组合物及其制备方法。 这里所示的实施方案适用于2H-SiC的薄膜和体积生长。 根据一个实施方案，本公开涉及用一种或多种表面活性剂掺杂下面的基底或支撑层以使高纯度2H-SiC成核和生长。 在另一个实施方案中，本公开内容涉及通过使用一种或多种表面活性剂在其它SiC多型体上成核2H-SiC制备2H-SiC组合物的方法。 表面活性剂可以包括AlN，Te，Sb和类似组合物。 这些将SiC成核转变成六角形2H-SiC材料的盘形。
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