-
公开(公告)号：US20170194527A1
公开(公告)日：2017-07-06
申请号：US15356152
申请日：2016-11-18
申请人： NARSINGH B. SINGH , JOHN V. VELIADIS , BETTINA NECHAY , ANDRE BERGHMANS , DAVID J. KNUTESON , DAVID KAHLER , BRIAN WAGNER , MARC SHERWIN
发明人： NARSINGH B. SINGH , JOHN V. VELIADIS , BETTINA NECHAY , ANDRE BERGHMANS , DAVID J. KNUTESON , DAVID KAHLER , BRIAN WAGNER , MARC SHERWIN
IPC分类号： H01L31/107 , H01L31/18 , H01L31/0336 , H01L27/144 , H01L31/0232
CPC分类号： H01L31/1075 , H01L27/1443 , H01L27/1446 , H01L31/02327 , H01L31/0336 , H01L31/035227 , H01L31/18
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
-
公开(公告)号：US09570646B2
公开(公告)日：2017-02-14
申请号：US14185567
申请日：2014-02-20
申请人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
发明人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
IPC分类号： H01L31/107 , H01L31/0336 , H01L31/0232 , H01L27/144 , H01L31/18
CPC分类号： H01L31/1075 , H01L27/1443 , H01L27/1446 , H01L31/02327 , H01L31/0336 , H01L31/035227 , H01L31/18
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。
-
公开(公告)号：US07830644B2
公开(公告)日：2010-11-09
申请号：US11713783
申请日：2007-03-05
申请人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
发明人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
CPC分类号： C01G23/002 , C01P2002/34 , C01P2002/72 , C01P2006/40 , C04B35/462 , C04B2235/3208 , C04B2235/3227 , C04B2235/3281 , H01G4/105 , H01G4/1209 , H01G4/1218 , H01G4/306
摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaCu 3 Ti 4 O 12或La 3 Ga 5 SiO 4的电介质。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善的结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器
-
公开(公告)号：US20190131480A1
公开(公告)日：2019-05-02
申请号：US16233705
申请日：2018-12-27
申请人： NARSINGH B. SINGH , JOHN V. VELIADIS , BETTINA NECHAY , ANDRE BERGHMANS , DAVID J. KNUTESON , DAVID KAHLER , BRIAN WAGNER , MARC SHERWIN
发明人： NARSINGH B. SINGH , JOHN V. VELIADIS , BETTINA NECHAY , ANDRE BERGHMANS , DAVID J. KNUTESON , DAVID KAHLER , BRIAN WAGNER , MARC SHERWIN
IPC分类号： H01L31/107 , H01L27/144 , H01L31/0352 , H01L31/18 , H01L31/0232 , H01L31/0336
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
-
公开(公告)号：US10211359B2
公开(公告)日：2019-02-19
申请号：US15356152
申请日：2016-11-18
申请人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
发明人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
IPC分类号： H01L31/107 , H01L31/0336 , H01L31/0232 , H01L27/144 , H01L31/18 , H01L31/0352
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
-
公开(公告)号：US20150236186A1
公开(公告)日：2015-08-20
申请号：US14185567
申请日：2014-02-20
申请人： NARSINGH B. SINGH , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
发明人： NARSINGH B. SINGH , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
IPC分类号： H01L31/107 , H01L31/18 , H01L27/144 , H01L31/0336 , H01L31/0232
CPC分类号： H01L31/1075 , H01L27/1443 , H01L27/1446 , H01L31/02327 , H01L31/0336 , H01L31/035227 , H01L31/18
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。
-
公开(公告)号：US20080218940A1
公开(公告)日：2008-09-11
申请号：US11713783
申请日：2007-03-05
申请人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
发明人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
CPC分类号： C01G23/002 , C01P2002/34 , C01P2002/72 , C01P2006/40 , C04B35/462 , C04B2235/3208 , C04B2235/3227 , C04B2235/3281 , H01G4/105 , H01G4/1209 , H01G4/1218 , H01G4/306
摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaC 3 3 Ti 4 O 12或La 3 N 3的电介质 > 5 SiO 4。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.012 秒)
