发明申请
- 专利标题: FERROELECTRIC CAPACITOR MANUFACTURING PROCESS
- 专利标题(中): 电磁电容器制造工艺
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申请号: US12025207申请日: 2008-02-04
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公开(公告)号: US20090194801A1公开(公告)日: 2009-08-06
- 发明人: Francis Gabriel Celii , Robert Kraft , Kezhakkedath R. Udayakumar , Scott Robert Summerfelt , Theodore S. Moise
- 申请人: Francis Gabriel Celii , Robert Kraft , Kezhakkedath R. Udayakumar , Scott Robert Summerfelt , Theodore S. Moise
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Inc.
- 当前专利权人: Texas Instruments Inc.
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L27/00
- IPC分类号: H01L27/00 ; H01L21/00
摘要:
A method of manufacturing a semiconductor device. The method comprises forming conductive and ferroelectric material layers on a semiconductor substrate. The material layers are patterned to form electrodes and a ferroelectric layer of a ferroelectric capacitor, wherein a conductive residue is generated on sidewalls of the ferroelectric capacitor as a by-product of the patterning. The method also comprises removing the conductive residue using a physical plasma etch clean-up process that includes maintaining a substrate temperature that is greater than about 60° C.
公开/授权文献
- US07985603B2 Ferroelectric capacitor manufacturing process 公开/授权日:2011-07-26