Invention Application
- Patent Title: PIEZOELECTRIC RESONATORS AND FABRICATION PROCESSES
- Patent Title (中): 压电谐振器和制造工艺
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Application No.: US13094687Application Date: 2011-04-26
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Publication No.: US20120274647A1Publication Date: 2012-11-01
- Inventor: Je-Hsiung Lan , Sang-June Park , Jonghae Kim , Evgeni Gousev , Matthew Nowak , Philip J. Stephanou , Justin Black , Kurt Petersen , Srinivasan Ganapathi
- Applicant: Je-Hsiung Lan , Sang-June Park , Jonghae Kim , Evgeni Gousev , Matthew Nowak , Philip J. Stephanou , Justin Black , Kurt Petersen , Srinivasan Ganapathi
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS TECHNOLOGIES, INC.
- Current Assignee: QUALCOMM MEMS TECHNOLOGIES, INC.
- Current Assignee Address: US CA San Diego
- Main IPC: H01L41/053
- IPC: H01L41/053 ; G09G5/39 ; H01L41/22 ; G06T1/60

Abstract:
This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a sacrificial layer is deposited on an insulating substrate. A lower electrode layer is formed proximate the sacrificial layer. A piezoelectric layer is deposited on the lower electrode layer. An upper electrode layer is formed on the piezoelectric layer. At least a portion of the sacrificial layer is removed to define a cavity such that at least a portion of the lower electrode layer is spaced apart from the insulating substrate.
Information query
IPC分类: