公开(公告)号：US20120274647A1

公开(公告)日：2012-11-01

申请号：US13094687

申请日：2011-04-26

申请人： Je-Hsiung Lan ,  Sang-June Park ,  Jonghae Kim ,  Evgeni Gousev ,  Matthew Nowak ,  Philip J. Stephanou ,  Justin Black ,  Kurt Petersen ,  Srinivasan Ganapathi

发明人： Je-Hsiung Lan ,  Sang-June Park ,  Jonghae Kim ,  Evgeni Gousev ,  Matthew Nowak ,  Philip J. Stephanou ,  Justin Black ,  Kurt Petersen ,  Srinivasan Ganapathi

IPC分类号： H01L41/053 ,  G09G5/39 ,  H01L41/22 ,  G06T1/60

CPC分类号： H03H3/0072 ,  H03H9/2447 ,  Y10T29/42

摘要： This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a sacrificial layer is deposited on an insulating substrate. A lower electrode layer is formed proximate the sacrificial layer. A piezoelectric layer is deposited on the lower electrode layer. An upper electrode layer is formed on the piezoelectric layer. At least a portion of the sacrificial layer is removed to define a cavity such that at least a portion of the lower electrode layer is spaced apart from the insulating substrate.

摘要翻译： 本公开提供了机电系统谐振器结构，设备，装置，系统和相关过程的实现。 在一个方面，牺牲层沉积在绝缘衬底上。 在牺牲层附近形成下电极层。 压电层沉积在下电极层上。 在压电层上形成上电极层。 去除牺牲层的至少一部分以限定空腔，使得下电极层的至少一部分与绝缘基板间隔开。

公开(公告)号：US20120293520A1

公开(公告)日：2012-11-22

申请号：US13111683

申请日：2011-05-19

申请人： Changhan Yun ,  Sang-June Park ,  Chi Shun Lo ,  Jonghae Kim ,  Je-Hsiung Lan ,  Sanghoon Joo

发明人： Changhan Yun ,  Sang-June Park ,  Chi Shun Lo ,  Jonghae Kim ,  Je-Hsiung Lan ,  Sanghoon Joo

IPC分类号： G06T1/00 ,  H03H9/17

CPC分类号： H03H9/173 ,  H03H9/02228

摘要： This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, resonator apparatus includes a first conductive layer including a first electrode and a second electrode. The first electrode is coupled to receive a first input signal, and the second electrode is coupled to provide a first output signal. A piezoelectric layer includes a piezoelectric material. The piezoelectric layer has a first side and a second side opposite the first side. The first side is proximate the first conductive layer, and the second side is electrically isolated from ground. In some examples, the second side of the piezoelectric layer can be exposed and/or electrically de-coupled from one or more components.

摘要翻译： 本公开提供了机电系统谐振器结构，设备，装置，系统和相关过程的实现。 在一个方面，谐振器装置包括包括第一电极和第二电极的第一导电层。 第一电极被耦合以接收第一输入信号，并且第二电极被耦合以提供第一输出信号。 压电层包括压电材料。 压电层具有与第一侧相对的第一侧和第二侧。 第一侧靠近第一导电层，第二侧与地电隔离。 在一些示例中，压电层的第二面可以暴露和/或从一个或多个部件电脱耦合。

公开(公告)号：US20120286886A1

公开(公告)日：2012-11-15

申请号：US13107764

申请日：2011-05-13

申请人： Jonghae Kim ,  Je-Hsiung Lan ,  Changhan Yun ,  Chi Shun Lo ,  Matthew Nowak

发明人： Jonghae Kim ,  Je-Hsiung Lan ,  Changhan Yun ,  Chi Shun Lo ,  Matthew Nowak

IPC分类号： H03B7/14

CPC分类号： H03H9/2426 ,  H03H9/02228 ,  H03H9/2405 ,  H03H9/462 ,  H03H2009/241

摘要： Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.

摘要翻译： 公开了机电系统谐振器结构，器件，电路和系统。 一方面，振荡器包括以反馈配置连接的有源部件和无源部件。 无源部件包括一个或多个轮廓模式谐振器（CMR）。 CMR包括设置在第一导电层和第二导电层之间的压电层。 导电层包括输入电极和输出电极。 无源部件被配置为输出第一谐振频率和第二谐振频率，其是第一谐振频率的奇整数谐波。 有源部件被配置为输出包括第一谐振频率和第二谐振频率的信号。 该输出信号可以是基本上为方波信号，其可以用作各种应用中的时钟。

公开(公告)号：US08471643B2

公开(公告)日：2013-06-25

申请号：US13107764

申请日：2011-05-13

申请人： Jonghae Kim ,  Je-Hsiung Lan ,  Changhan Yun ,  Chi Shun Lo ,  Matthew Nowak

发明人： Jonghae Kim ,  Je-Hsiung Lan ,  Changhan Yun ,  Chi Shun Lo ,  Matthew Nowak

IPC分类号： H03B5/30

CPC分类号： H03H9/2426 ,  H03H9/02228 ,  H03H9/2405 ,  H03H9/462 ,  H03H2009/241

摘要： Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.

摘要翻译： 公开了机电系统谐振器结构，器件，电路和系统。 一方面，振荡器包括以反馈配置连接的有源部件和无源部件。 无源部件包括一个或多个轮廓模式谐振器（CMR）。 CMR包括设置在第一导电层和第二导电层之间的压电层。 导电层包括输入电极和输出电极。 无源部件被配置为输出第一谐振频率和第二谐振频率，其是第一谐振频率的奇整数谐波。 有源部件被配置为输出包括第一谐振频率和第二谐振频率的信号。 该输出信号可以是基本上为方波信号，其可以用作各种应用中的时钟。

公开(公告)号：US08218228B2

公开(公告)日：2012-07-10

申请号：US12642421

申请日：2009-12-18

申请人： Je-Hsiung Lan ,  Evgeni Gousev ,  Ernest Tadashi Ozaki

发明人： Je-Hsiung Lan ,  Evgeni Gousev ,  Ernest Tadashi Ozaki

IPC分类号： G02B26/00

CPC分类号： H01G5/16 ,  G02B26/001

摘要： A two-terminal, variable capacitance device is described that is constructed by connecting multiple MEMS devices having different actuation or “pull in” voltages in parallel.

摘要翻译： 描述了通过并联具有不同驱动或“拉入”电压的多个MEMS器件构成的两端可变电容器件。

公开(公告)号：US20110149374A1

公开(公告)日：2011-06-23

申请号：US12642421

申请日：2009-12-18

申请人： Je-Hsiung Lan ,  Evgeni Gousev ,  Ernest Tadashi Ozaki

发明人： Je-Hsiung Lan ,  Evgeni Gousev ,  Ernest Tadashi Ozaki

IPC分类号： G02B26/02 ,  H01G7/00 ,  H01G5/16 ,  H01G5/40 ,  H01L29/93

CPC分类号： H01G5/16 ,  G02B26/001

摘要： A two-terminal, variable capacitance device is described that is constructed by connecting multiple MEMS devices having different actuation or “pull in” voltages in parallel.

摘要翻译： 描述了通过并联具有不同驱动或“拉入”电压的多个MEMS器件构成的两端可变电容器件。

公开(公告)号：US08363380B2

公开(公告)日：2013-01-29

申请号：US12473882

申请日：2009-05-28

申请人： Je-Hsiung Lan ,  Evgeni P. Gousev ,  Wenyue Zhang ,  Manish Kothari ,  Sang-June Park

发明人： Je-Hsiung Lan ,  Evgeni P. Gousev ,  Wenyue Zhang ,  Manish Kothari ,  Sang-June Park

IPC分类号： H01G7/00 ,  H01G7/06

CPC分类号： H01G7/00 ,  H01G5/16 ,  H01P1/127 ,  Y10T29/435

摘要： MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal receiving a DC voltage, and (iii) a top plate formed over the first and second bottom plates and electrically coupled to a third terminal. The DC voltage causes the top plate to mechanically move and vary the capacitance observed by the input signal. In another exemplary design, a MEMS varactor includes first, second and third plates formed on over one another and electrically coupled to first, second and third terminals, respectively. First and second DC voltages may be applied to the first and third terminals, respectively. An input signal may be passed between the first and second terminals.

摘要翻译： 描述能够处理大信号和/或实现高电容调谐范围的MEMS变容二极管。 在示例性设计中，MEMS变容二极管包括（i）电耦合到接收输入信号的第一端子的第一底板，（ii）电耦合到接收DC电压的第二端子的第二底板，以及（iii） 顶板形成在第一和第二底板上并电耦合到第三端子。 直流电压使顶板机械地移动并改变由输入信号观察到的电容。 在另一示例性设计中，MEMS变容二极管包括彼此形成并分别电耦合到第一，第二和第三端子的第一，第二和第三板。 第一和第二直流电压可以分别施加到第一和第三端子。 输入信号可以在第一和第二端子之间通过。

公开(公告)号：US20110109383A1

公开(公告)日：2011-05-12

申请号：US12473882

申请日：2009-05-28

申请人： Je-Hsiung Lan ,  Evgeni P. Gousev ,  Wenyue Zhang ,  Manish Kothari ,  Sang-June Park

发明人： Je-Hsiung Lan ,  Evgeni P. Gousev ,  Wenyue Zhang ,  Manish Kothari ,  Sang-June Park

IPC分类号： H01L29/93

CPC分类号： H01G7/00 ,  H01G5/16 ,  H01P1/127 ,  Y10T29/435

摘要： MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal receiving a DC voltage, and (iii) a top plate formed over the first and second bottom plates and electrically coupled to a third terminal. The DC voltage causes the top plate to mechanically move and vary the capacitance observed by the input signal. In another exemplary design, a MEMS varactor includes first, second and third plates formed on over one another and electrically coupled to first, second and third terminals, respectively. First and second DC voltages may be applied to the first and third terminals, respectively. An input signal may be passed between the first and second terminals.

摘要翻译： 描述能够处理大信号和/或实现高电容调谐范围的MEMS变容二极管。 在示例性设计中，MEMS变容二极管包括（i）电耦合到接收输入信号的第一端子的第一底板，（ii）电耦合到接收DC电压的第二端子的第二底板，以及（iii） 顶板形成在第一和第二底板上并电耦合到第三端子。 直流电压使顶板机械地移动并改变由输入信号观察到的电容。 在另一示例性设计中，MEMS变容二极管包括彼此形成并分别电耦合到第一，第二和第三端子的第一，第二和第三板。 第一和第二直流电压可以分别施加到第一和第三端子。 输入信号可以在第一和第二端子之间通过。

公开(公告)号：US08492874B2

公开(公告)日：2013-07-23

申请号：US13021151

申请日：2011-02-04

申请人： Je-Hsiung Lan ,  Matthew Michael Nowak ,  Evgeni P. Gousev ,  Jonghae Kim ,  Clarence Chui

发明人： Je-Hsiung Lan ,  Matthew Michael Nowak ,  Evgeni P. Gousev ,  Jonghae Kim ,  Clarence Chui

IPC分类号： H01G4/10 ,  H01G4/12 ,  H01L23/5222 ,  H01L28/82 ,  H01L29/945 ,  H01L23/642

CPC分类号： H01L28/82 ,  H01G4/012 ,  H01G4/10 ,  H01L23/5223 ,  H01L23/642 ,  H01L28/87 ,  H01L29/945 ,  H01L2224/16225 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311

摘要： Higher capacitance density is achieved by increasing a surface area of a capacitor. A larger surface area may be obtained by forming isotropic ball shapes (a concave surface) in the trenches on the semiconductor die. The concave surfaces are fabricated by depositing bilayers of amorphous-silicon and silicon oxide. Openings are patterned in the silicon oxide hard mask for trenches. The openings are transferred to the amorphous-silicon layers through isotropic etching to form concave surfaces. Conducting, insulating, and conducting layers are deposited on the concave surfaces of the trenches by atomic layer deposition.

摘要翻译： 通过增加电容器的表面积来实现更高的电容密度。 可以通过在半导体管芯上的沟槽中形成各向同性球形（凹面）来获得更大的表面积。 通过沉积非晶硅和氧化硅的双层来制造凹面。 在用于沟槽的氧化硅硬掩模中图案化开口。 通过各向同性蚀刻将开口转移到非晶硅层以形成凹面。 导电，绝缘和导电层通过原子层沉积沉积在沟槽的凹面上。

公开(公告)号：US20120199949A1

公开(公告)日：2012-08-09

申请号：US13021151

申请日：2011-02-04

申请人： Je-Hsiung Lan ,  Matthew Michael Nowak ,  Evgeni P. Gousev ,  Jonghae Kim ,  Clarence Chui

发明人： Je-Hsiung Lan ,  Matthew Michael Nowak ,  Evgeni P. Gousev ,  Jonghae Kim ,  Clarence Chui

IPC分类号： H01L29/92 ,  H01L21/62

CPC分类号： H01L28/82 ,  H01G4/012 ,  H01G4/10 ,  H01L23/5223 ,  H01L23/642 ,  H01L28/87 ,  H01L29/945 ,  H01L2224/16225 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311

摘要： Higher capacitance density is achieved by increasing a surface area of a capacitor. A larger surface area may be obtained by forming isotropic ball shapes (a concave surface) in the trenches on the semiconductor die. The concave surfaces are fabricated by depositing bilayers of amorphous-silicon and silicon oxide. Openings are patterned in the silicon oxide hard mask for trenches. The openings are transferred to the amorphous-silicon layers through isotropic etching to form concave surfaces. Conducting, insulating, and conducting layers are deposited on the concave surfaces of the trenches by atomic layer deposition.

摘要翻译： 通过增加电容器的表面积来实现更高的电容密度。 可以通过在半导体管芯上的沟槽中形成各向同性球形（凹面）来获得更大的表面积。 通过沉积非晶硅和氧化硅的双层来制造凹面。 在用于沟槽的氧化硅硬掩模中图案化开口。 通过各向同性蚀刻将开口转移到非晶硅层以形成凹面。 导电，绝缘和导电层通过原子层沉积沉积在沟槽的凹面上。