发明申请
- 专利标题: Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same
- 专利标题(中): 用于极紫外光刻的相移掩模及其制造方法
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申请号: US13564198申请日: 2012-08-01
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公开(公告)号: US20140038086A1公开(公告)日: 2014-02-06
- 发明人: Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
- 申请人: Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G03F1/24
- IPC分类号: G03F1/24 ; G03F7/20
摘要:
A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
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