发明申请
US20140038086A1 Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same 有权
用于极紫外光刻的相移掩模及其制造方法

Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same
摘要:
A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
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