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    Reflective mask and method of making same
    2.
    发明授权
    Reflective mask and method of making same 有权
    反光罩及其制作方法

    公开(公告)号：US08877409B2

    公开(公告)日：2014-11-04

    申请号：US13451705

    申请日：2012-04-20

    申请人： Pei-Cheng Hsu ,  Chih-Tsung Shih ,  Chia-Jen Chen ,  Tsiao-Chen Wu ,  Shinn-Sheng Yu ,  Hsin-Chang Lee ,  Anthony Yen

    发明人： Pei-Cheng Hsu ,  Chih-Tsung Shih ,  Chia-Jen Chen ,  Tsiao-Chen Wu ,  Shinn-Sheng Yu ,  Hsin-Chang Lee ,  Anthony Yen

    IPC分类号： G03F1/24

    CPC分类号： G03F1/24 ,  G03F1/48 ,  H01L21/0337

    摘要： A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.

    摘要翻译： 描述了一种反光罩。 掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在 堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。 边界沟到达覆盖层，沉积在边界沟内的第二吸收层，第二吸收层接触覆盖层。 在一些情况下，边界沟穿过覆盖层并部分地进入反射层。

    REFLECTIVE MASK AND METHOD OF MAKING SAME
    3.
    发明申请
    REFLECTIVE MASK AND METHOD OF MAKING SAME 有权
    反射掩模及其制作方法

    公开(公告)号：US20130280643A1

    公开(公告)日：2013-10-24

    申请号：US13451705

    申请日：2012-04-20

    申请人： Pei-Cheng Hsu ,  Chih-Tsung Shih ,  Chia-Jen Chen ,  Tsiao-Chen Wu ,  Shinn-Sheng Yu ,  Hsin-Chang Lee ,  Anthony Yen

    发明人： Pei-Cheng Hsu ,  Chih-Tsung Shih ,  Chia-Jen Chen ,  Tsiao-Chen Wu ,  Shinn-Sheng Yu ,  Hsin-Chang Lee ,  Anthony Yen

    IPC分类号： G03F1/24

    CPC分类号： G03F1/24 ,  G03F1/48 ,  H01L21/0337

    摘要： A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, the second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer.

    摘要翻译： 描述了一种反光罩。 掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在 堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。 边界沟到达覆盖层，第二吸收层沉积在边界沟内，第二吸收层接触封盖层。

    Extreme ultraviolet lithography process and mask
    5.
    发明授权
    Extreme ultraviolet lithography process and mask 有权
    极紫外光刻工艺和面膜

    公开(公告)号：US08841047B2

    公开(公告)日：2014-09-23

    申请号：US13437099

    申请日：2012-04-02

    申请人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    发明人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    IPC分类号： G03F1/00

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  G03F1/58 ,  G03F7/7015 ,  G03F7/70191

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由具有部分相干性的几乎轴向照明（ONI）暴露; 小于0.3以产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same
    6.
    发明申请
    Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same 有权
    极紫外光刻面和多层沉积方法制作相同

    公开(公告)号：US20140038090A1

    公开(公告)日：2014-02-06

    申请号：US13567900

    申请日：2012-08-06

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F7/20

    CPC分类号： G03F1/24 ,  G03F1/52

    摘要： A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.

    摘要翻译： 公开了一种掩模，其制造方法及其使用方法。 在一个示例中，掩模包括沉积在衬底上的衬底和反射多层涂层。 反射多层涂层通过定位基板形成，使得在基板的法线和着陆在基板上的颗粒之间形成角度α，并使基板围绕与颗粒的着陆方向平行的轴线旋转。 在一个实例中，反射多层涂层包括沉积在第一层上的第一层和第二层。 反射多层涂层的相缺陷区域包括在第一位置处的第一层中的第一变形，以及在第二位置处的第二层中的第二变形，第二位置从第一位置横向移位。

    Extreme ultraviolet lithography process and mask
    7.
    发明授权
    Extreme ultraviolet lithography process and mask 有权
    极紫外光刻工艺和面膜

    公开(公告)号：US08628897B1

    公开(公告)日：2014-01-14

    申请号：US13542458

    申请日：2012-07-05

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F1/22

    CPC分类号： G03F1/24

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK
    8.
    发明申请
    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK 有权
    极致超紫外线光刻工艺和掩模

    公开(公告)号：US20140011120A1

    公开(公告)日：2014-01-09

    申请号：US13542458

    申请日：2012-07-05

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F7/20

    CPC分类号： G03F1/24

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK
    9.
    发明申请
    EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK 有权
    极致超紫外线光刻工艺和掩模

    公开(公告)号：US20130260288A1

    公开(公告)日：2013-10-03

    申请号：US13437099

    申请日：2012-04-02

    申请人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    发明人： Shinn-Sheng Yu ,  Yen-Cheng Lu ,  Anthony Yen

    IPC分类号： G03F1/24 ,  G03F7/20

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  G03F1/58 ,  G03F7/7015 ,  G03F7/70191

    摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.

    摘要翻译： 公开了一种极紫外光刻（EUVL）的方法。 该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。 大部分非衍射光被去除。 衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

    Method for mask fabrication and repair
    10.
    发明授权
    Method for mask fabrication and repair 有权
    掩模制造和修理方法

    公开(公告)号：US08785084B2

    公开(公告)日：2014-07-22

    申请号：US13602916

    申请日：2012-09-04

    申请人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    发明人： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Anthony Yen

    IPC分类号： G03F1/72 ,  G03F1/84 ,  G03F1/24

    CPC分类号： G03F1/24 ,  G03F1/72

    摘要： A method for repairing phase defects for an extreme ultraviolet (EUV) mask is disclosed. The method includes receiving a patterned EUV mask with at least one phase-defect region, determining location and size of the phase-defect region, depositing an absorber material to cover the phase-defect region and removing a portion of the patterned absorption layer near the phase-defect region in the patterned EUV mask to form an absorber-absent region.

    摘要翻译： 公开了用于修复极紫外（EUV）掩模的相缺陷的方法。 该方法包括接收具有至少一个相位缺陷区域的图案化EUV掩模，确定相缺陷区域的位置和尺寸，沉积吸收材料以覆盖相缺陷区域并且去除图案化吸收层附近的一部分 图案化的EUV掩模中的相缺陷区域以形成不存在吸收体的区域。