Invention Application
US20150115220A1 (Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE
审中-公开
（Al，In，Ga，B）N图案基板上的器件结构
- Patent Title: (Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE
- Patent Title (中): （Al，In，Ga，B）N图案基板上的器件结构
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Application No.: US14511966Application Date: 2014-10-10
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Publication No.: US20150115220A1Publication Date: 2015-04-30
- Inventor: Michael Iza , James S. Speck , Shuji Nakamura , Steven P. DenBaars
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Main IPC: H01L33/12
- IPC: H01L33/12 ; H01L33/00 ; H01L33/42 ; H01L33/06 ; H01L33/32
Abstract:
A nitride light emitting diode comprising at least one nitride-based active region formed on or above a patterned substrate, wherein the active region is comprised of at least one quantum well structure; and a nitride interlayer, formed on or above the active region, having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN, where 0
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