发明申请
US20160043300A1 ELECTRONIC DEVICE 审中-公开
电子设备

ELECTRONIC DEVICE
摘要:
An electronic device includes semiconductor memory, the semiconductor memory including an under layer; a first magnetic layer located over the under layer and having a variable magnetization direction; a tunnel barrier layer located over the first magnetic layer; and a second magnetic layer located over the tunnel barrier layer and having a pinned magnetization direction, wherein the under layer includes a first metal nitride layer having a NaCl crystal structure and a second metal nitride layer containing a light metal.
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