发明申请
- 专利标题： CMP-FRIENDLY COATINGS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS
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申请号： US15047793申请日： 2016-02-19
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公开(公告)号： US20160172209A1公开(公告)日： 2016-06-16
- 发明人: Wen-Kuei Liu , Teng-Chun Tsai , Kuo-Yin Lin , Shen-Nan Lee , Yu-Wei Chou , Kuo-Cheng Lien , Chang-Sheng Lin , Chih-Chang Hung , Yung-Cheng Lu
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/3213 ; H01L21/311 ; H01L21/027 ; H01L21/28
摘要：
An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.
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