Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US15235756Application Date: 2016-08-12
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Publication No.: US20160351392A1Publication Date: 2016-12-01
- Inventor: Masayuki IWAMI , Hirotatsu ISHII , Norihiro IWAI , Takeyoshi MATSUDA , Akihiko KASUKAWA , Takuya ISHIKAWA , Yasumasa KAWAKITA , Eisaku KAJI
- Applicant: FURUKAWA ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: FURUKAWA ELECTRIC CO., LTD.
- Current Assignee: FURUKAWA ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Priority: JP2014-047339 20140311
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/205 ; H01L29/778 ; H01S5/227 ; H01L31/0304 ; H01L31/105 ; H01S5/30 ; H01S5/343 ; H01L29/04 ; H01L31/036
Abstract:
A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.
Public/Granted literature
- US09960572B2 Semiconductor device Public/Granted day:2018-05-01
Information query
IPC分类:
