公开(公告)号：US20160351392A1

公开(公告)日：2016-12-01

申请号：US15235756

申请日：2016-08-12

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC: H01L21/02 ,  H01L29/205 ,  H01L29/778 ,  H01S5/227 ,  H01L31/0304 ,  H01L31/105 ,  H01S5/30 ,  H01S5/343 ,  H01L29/04 ,  H01L31/036

CPC classification number: H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

Abstract: A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.

Abstract translation: 半导体器件包括由包含As作为V族的主要成分的III-V族半导体晶体形成的半导体层。 以半导体层中的III-V族半导体晶体的V基部位以0.02〜5％的浓度引入除As以外的V族元素。

公开(公告)号：US20160352075A1

公开(公告)日：2016-12-01

申请号：US15235685

申请日：2016-08-12

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC: H01S5/343 ,  H01S5/227 ,  H01S5/30

CPC classification number: H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

Abstract: A semiconductor laser device includes an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al.

Abstract translation: 半导体激光装置包括具有阱层和由含有As作为V族的主要成分的III-V族半导体晶体形成的势垒层的有源层。 在As阱中的至少一个阱层和阻挡层中的以III-V族半导体晶体的V基部位以0.02〜5％的浓度引入As以外的AV族元素， 阱层和阻挡层中的至少一个中的III-V族半导体晶体含有Al。