公开(公告)号：US20160351392A1

公开(公告)日：2016-12-01

申请号：US15235756

申请日：2016-08-12

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC: H01L21/02 ,  H01L29/205 ,  H01L29/778 ,  H01S5/227 ,  H01L31/0304 ,  H01L31/105 ,  H01S5/30 ,  H01S5/343 ,  H01L29/04 ,  H01L31/036

CPC classification number: H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

Abstract: A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.

Abstract translation: 半导体器件包括由包含As作为V族的主要成分的III-V族半导体晶体形成的半导体层。 以半导体层中的III-V族半导体晶体的V基部位以0.02〜5％的浓度引入除As以外的V族元素。

公开(公告)号：US20160352075A1

公开(公告)日：2016-12-01

申请号：US15235685

申请日：2016-08-12

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC: H01S5/343 ,  H01S5/227 ,  H01S5/30

CPC classification number: H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

Abstract: A semiconductor laser device includes an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al.

Abstract translation: 半导体激光装置包括具有阱层和由含有As作为V族的主要成分的III-V族半导体晶体形成的势垒层的有源层。 在As阱中的至少一个阱层和阻挡层中的以III-V族半导体晶体的V基部位以0.02〜5％的浓度引入As以外的AV族元素， 阱层和阻挡层中的至少一个中的III-V族半导体晶体含有Al。

公开(公告)号：US20140120703A1

公开(公告)日：2014-05-01

申请号：US14062304

申请日：2013-10-24

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Masayuki IWAMI

IPC: H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66204 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861 ,  H01L33/007

Abstract: Forming a group III nitride semiconductor layer having p-type conductivity on at least one layer or more formed on an Si substrate or sapphire substrate using at least one of an epitaxial growth or ion implantation method. When forming the group III nitride semiconductor layer, at least one type of metal element selected from Zn, Li, Au, Ag, Cu, Pt, and Pd having a formation energy of a group III element substitute higher than that of Mg is doped simultaneously with Mg of a p-type dopant to introduce an interstitial site. Subsequent to activation of Mg as an acceptor, the metal element is removed from the group III nitride semiconductor layer, and the concentration of the metal element is not more than 1/100 of the concentration of Mg to realize a hole concentration of not less than 1018 to 1019 cm−3.

Abstract translation: 使用外延生长或离子注入方法中的至少一种，在形成于Si衬底或蓝宝石衬底上的至少一层以上形成具有p型导电性的III族氮化物半导体层。 当形成III族氮化物半导体层时，同时掺杂选自具有替代高于Mg的III族元素的形成能的Zn，Li，Au，Ag，Cu，Pt和Pd中的至少一种类型的金属元素 与Mg的p型掺杂剂引入间隙位置。 在作为受体的Mg活化后，从III族氮化物半导体层除去金属元素，金属元素的浓度不超过Mg的浓度的1/100，以实现不小于 1018至1019厘米-3。