公开(公告)号：US20230020128A1

公开(公告)日：2023-01-19

申请号：US17951291

申请日：2022-09-23

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Takahiro TOMIYASU ,  Eisaku KAJI ,  Yutaka OHKI

IPC分类号： H01S5/023 ,  H01S5/02345

摘要： A submount includes a light emitting device mounted thereon. The submount includes: a base including a first surface extending in a first direction and in a second direction that is orthogonal to the first direction; a first electrode extending in the first direction and in the second direction on the first surface, the first electrode including a first end in the second direction, and a second end in opposite direction of the second direction, the second end extending in the first direction; and a second electrode extending in the first direction and in the second direction on the first surface, the second electrode including a third end in the opposite direction of the second direction, the third end being separated from the first end in the second direction with a gap therebetween, and a fourth end in the second direction, the fourth end extending in the first direction. In the second electrode, a second width between the third end and the fourth end in the second direction differs according to a position in the first direction.

公开(公告)号：US20160351392A1

公开(公告)日：2016-12-01

申请号：US15235756

申请日：2016-08-12

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC分类号： H01L21/02 ,  H01L29/205 ,  H01L29/778 ,  H01S5/227 ,  H01L31/0304 ,  H01L31/105 ,  H01S5/30 ,  H01S5/343 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

摘要： A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.

摘要翻译： 半导体器件包括由包含As作为V族的主要成分的III-V族半导体晶体形成的半导体层。 以半导体层中的III-V族半导体晶体的V基部位以0.02〜5％的浓度引入除As以外的V族元素。

公开(公告)号：US20180323579A1

公开(公告)日：2018-11-08

申请号：US16027938

申请日：2018-07-05

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Eisaku KAJI ,  Yutaka OHKI

IPC分类号： H01S5/10 ,  H01S5/042 ,  H01S5/022 ,  G02B6/32 ,  G02B6/42 ,  G02B6/34 ,  G02B6/293

CPC分类号： H01S5/1014 ,  G02B6/29362 ,  G02B6/2938 ,  G02B6/32 ,  G02B6/34 ,  G02B6/4206 ,  G02B6/4215 ,  H01S5/02236 ,  H01S5/0421 ,  H01S5/1039 ,  H01S5/22

摘要： A semiconductor laser device of an edge emission type, where a waveguide mode is multi-mode, is provided. The semiconductor laser device includes a first facet of the waveguide on an emission direction front side, the first facet having a first width in a horizontal direction perpendicular to a longitudinal direction of the waveguide; and a second facet of the waveguide on an emission direction rear side, the second facet having the first width, wherein a width of the waveguide, in the horizontal direction, is at least partially narrower than the first width, between the first facet and the second facet.

公开(公告)号：US20210281039A1

公开(公告)日：2021-09-09

申请号：US17329666

申请日：2021-05-25

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Eisaku KAJI ,  Yutaka OHKI

IPC分类号： H01S5/0237 ,  H01S5/023

摘要： A semiconductor-laser-chip-on-submount includes: a semiconductor laser chip that includes a semiconductor portion having an emitting facet and a rear facet along a longitudinal direction and emits laser light from the emitting facet; and a submount where the semiconductor laser chip is mounted. Further, a first distance between the submount and the emitting facet of the semiconductor portion is less than a second distance between the submount and the rear facet of the semiconductor portion.

公开(公告)号：US20160352075A1

公开(公告)日：2016-12-01

申请号：US15235685

申请日：2016-08-12

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC分类号： H01S5/343 ,  H01S5/227 ,  H01S5/30

CPC分类号： H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

摘要： A semiconductor laser device includes an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al.

摘要翻译： 半导体激光装置包括具有阱层和由含有As作为V族的主要成分的III-V族半导体晶体形成的势垒层的有源层。 在As阱中的至少一个阱层和阻挡层中的以III-V族半导体晶体的V基部位以0.02〜5％的浓度引入As以外的AV族元素， 阱层和阻挡层中的至少一个中的III-V族半导体晶体含有Al。