公开(公告)号：US20160351392A1

公开(公告)日：2016-12-01

申请号：US15235756

申请日：2016-08-12

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC: H01L21/02 ,  H01L29/205 ,  H01L29/778 ,  H01S5/227 ,  H01L31/0304 ,  H01L31/105 ,  H01S5/30 ,  H01S5/343 ,  H01L29/04 ,  H01L31/036

CPC classification number: H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

Abstract: A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.

Abstract translation: 半导体器件包括由包含As作为V族的主要成分的III-V族半导体晶体形成的半导体层。 以半导体层中的III-V族半导体晶体的V基部位以0.02〜5％的浓度引入除As以外的V族元素。

公开(公告)号：US20160352075A1

公开(公告)日：2016-12-01

申请号：US15235685

申请日：2016-08-12

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Masayuki IWAMI ,  Hirotatsu ISHII ,  Norihiro IWAI ,  Takeyoshi MATSUDA ,  Akihiko KASUKAWA ,  Takuya ISHIKAWA ,  Yasumasa KAWAKITA ,  Eisaku KAJI

IPC: H01S5/343 ,  H01S5/227 ,  H01S5/30

CPC classification number: H01S5/34313 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/201 ,  H01L29/205 ,  H01L29/36 ,  H01L29/7784 ,  H01L29/7787 ,  H01L29/868 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/105 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/32 ,  H01S5/32358 ,  H01S5/32366 ,  H01S5/3434 ,  H01S5/34373

Abstract: A semiconductor laser device includes an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al.

Abstract translation: 半导体激光装置包括具有阱层和由含有As作为V族的主要成分的III-V族半导体晶体形成的势垒层的有源层。 在As阱中的至少一个阱层和阻挡层中的以III-V族半导体晶体的V基部位以0.02〜5％的浓度引入As以外的AV族元素， 阱层和阻挡层中的至少一个中的III-V族半导体晶体含有Al。

公开(公告)号：US20220003950A1

公开(公告)日：2022-01-06

申请号：US17479269

申请日：2021-09-20

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Takahiro TOMIYASU ,  Hirotatsu ISHII ,  Yoshihiro EMORI ,  Kenichi SUYAMA ,  Kouji MOCHIDUKI

IPC: G02B6/44

Abstract: An optical processing structure of an optical fiber, includes: an optical fiber that includes a core, a cladding, and a coating, the coating being partially removed; and a thermally conductive protective material made of a silicone-based thermally conductive compound and provided around the cladding in a coating removed region of the optical fiber. Further, the thermally conductive protective material contains a filler having a refractive index higher than a refractive index of the cladding, and the filler is present in a region where evanescent light seeping out of the cladding is present when cladding mode light propagating in the cladding is totally reflected.

公开(公告)号：US20240106189A1

公开(公告)日：2024-03-28

申请号：US18534857

申请日：2023-12-11

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yasumasa KAWAKITA ,  Masakazu MIURA ,  Hirotatsu ISHII ,  Tetsuya TAKEUCHI

IPC: H01S5/023 ,  H01S5/02345

CPC classification number: H01S5/023 ,  H01S5/02345

Abstract: A chip on submount includes: a submount including a first surface directed in a first direction; a covering layer mounted on the first surface, extending to intersect the first direction, and including a second surface directed in the first direction; a laser element mounted on the second surface and including: a third surface directed in the first direction; and a light emission unit positioned at an intermediate portion of the laser element along a second direction intersecting the first direction, extending in a third direction intersecting the first direction and second direction, and configured to output laser light in the third direction; and a bonding wire attached onto the third surface and configured to exert a pressing force on the laser element, the pressing force including a component force directed in a direction opposite to the first direction.

公开(公告)号：US20130250993A1

公开(公告)日：2013-09-26

申请号：US13898067

申请日：2013-05-20

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yasumasa KAWAKITA ,  Takeo KAGEYAMA ,  Hitoshi SHIMIZU ,  Hirotatsu ISHII

IPC: H01S5/183

CPC classification number: H01S5/18341 ,  B82Y20/00 ,  G11B7/123 ,  G11B7/127 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01S5/0014 ,  H01S5/0071 ,  H01S5/0208 ,  H01S5/02228 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/02292 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/34306 ,  H01S5/423 ,  H01L2924/00014

Abstract: Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.

Abstract translation: 包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8 @ x @ x As）形成的低折射率层的周期性结构形成， 1）和由AlyGa1-yAs（0 @ y @ x）形成的高折射率层，低折射率层和高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。