Invention Application
- Patent Title: MAGNETORESISTANCE EFFECT ELEMENT
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Application No.: US15559195Application Date: 2016-03-28
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Publication No.: US20180083186A1Publication Date: 2018-03-22
- Inventor: Tomoyuki SASAKI , Tatsuo SHIBATA , Katsuyuki NAKADA , Yoshitomo TANAKA
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2015-071414 20150331
- International Application: PCT/JP2016/059949 WO 20160328
- Main IPC: H01L43/08
- IPC: H01L43/08 ; G11C11/16 ; H01L43/02 ; H01L43/10 ; H01L27/22 ; H01L43/12
Abstract:
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
Public/Granted literature
- US10109788B2 Magnetoresistance effect element Public/Granted day:2018-10-23
Information query
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