- 专利标题： ORIENTED ALUMINA SUBSTRATE FOR EPITAXIAL GROWTH
-
申请号： US15902266申请日： 2018-02-22
-
公开(公告)号： US20180179664A1公开(公告)日： 2018-06-28
- 发明人: Morimichi WATANABE , Kei SATO , Kiyoshi MATSUSHIMA , Tsutomu NANATAKI
- 申请人： NGK INSULATORS, LTD.
- 申请人地址： JP Nagoya-City
- 专利权人： NGK INSULATORS, LTD.
- 当前专利权人： NGK INSULATORS, LTD.
- 当前专利权人地址： JP Nagoya-City
- 优先权： JP2015-193943 20150930; JP2015-193944 20150930; JP2015-224164 20151116; JP2016-011190 20160125; JP2016-034005 20160225; JP2016-066431 20160329; JP2016-139508 20160714
- 主分类号： C30B29/20
- IPC分类号： C30B29/20 ; H01L33/00 ; H01L21/02 ; H01L21/683 ; C30B29/40 ; C30B19/02 ; C30B25/18
摘要：
An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.
公开/授权文献
- US10435815B2 Oriented alumina substrate for epitaxial growth 公开/授权日：2019-10-08