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公开(公告)号：US20240401236A1
公开(公告)日：2024-12-05
申请号：US18798950
申请日：2024-08-09
Applicant: NGK INSULATORS, LTD.
Inventor： Hiroharu KOBAYASHI , Hirohisa OGAWA , Morimichi WATANABE
IPC: C30B29/40
Abstract: There is provided an AlN single-crystal substrate containing a carbon atom and a rare earth atom as impurities, and satisfies a relation: 0.0010
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公开(公告)号：US20240384435A1
公开(公告)日：2024-11-21
申请号：US18786978
申请日：2024-07-29
Applicant: NGK INSULATORS, LTD.
Inventor： Hirohisa OGAWA , Morimichi WATANABE , Hiroharu KOBAYASHI
IPC: C30B29/40
Abstract: There is provided an AlN single-crystal substrate of a circular shape with a radius r, wherein when the AlN single-crystal substrate is sectioned into three regions, the three regions being a central section, which is a region radially extending from a center of the AlN single-crystal substrate to 0.4r, a middle section, which is a region excluding the central section from a region radially extending from the center of the AlN single-crystal substrate to 0.7r, and an outer circumferential section, which is a region excluding the central section and the middle section from an entire region of the AlN single-crystal substrate, a dislocation density Dc of the central section, a dislocation density Dm of the middle section, and a dislocation density Dp of the outer circumferential section satisfy the relationship Dm>Dp>Dc.
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公开(公告)号：US20200216364A1
公开(公告)日：2020-07-09
申请号：US16818025
申请日：2020-03-13
Applicant: NGK INSULATORS, LTD.
Inventor： Morimichi WATANABE , Kei SATO , Kiyoshi MATSUSHIMA , Takahiro MAEDA , Jun YOSHIKAWA , Tsutomu NANATAKI
IPC: C04B35/645 , C04B35/111
Abstract: An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm2, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a maximum profile height Pt of 0.8 μm or less.
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4.发明申请POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME 审中-公开多晶硅氮化物自支撑基板和使用相同的发光元件公开(公告)号：US20170077349A1
公开(公告)日：2017-03-16
申请号：US15359813
申请日：2016-11-23
Applicant: NGK INSULATORS, LTD.
Inventor： Morimichi WATANABE , Jun YOSHIKAWA , Yoshitaka KURAOKA , Tsutomu NANATAKI
IPC: H01L33/18 , H01L33/00 , H01L33/06 , C30B19/02 , C30B29/40 , C30B25/18 , C30B9/12 , C30B28/04 , C30B29/60 , H01L33/32 , C30B19/12
CPC classification number: H01L33/18 , C30B9/00 , C30B9/12 , C30B19/02 , C30B19/12 , C30B25/18 , C30B25/20 , C30B28/04 , C30B29/406 , C30B29/605 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/32
Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.
Abstract translation: 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。
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公开(公告)号：US20130235507A1
公开(公告)日：2013-09-12
申请号：US13869285
申请日：2013-04-24
Applicant: NGK INSULATORS, LTD.
Inventor： Kenichiro AIKAWA , Morimichi WATANABE , Asumi JINDO , Yuji KATSUDA , Yosuke SATO , Yoshinori ISODA
IPC: H01L21/683
CPC classification number: H01L21/6833 , C04B35/58 , C04B35/581 , C04B35/6261 , C04B35/62655 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3865 , C04B2235/3869 , C04B2235/5445 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9669 , C23C14/3414
Abstract: Electrostatic chucks (1A to 1F) are provided with: susceptors (11A to 11F) having an attracting surface (11a) that attracts and holds semiconductors; and electrostatic chuck electrodes (4) that are embedded in the susceptors. The susceptors are provided with plate-shape bodies (3) and surface corrosion-resistant layers (2) that face the attracting surface. The surface corrosion-resistant layer (2) is made from a ceramic material having magnesium, aluminum, oxygen and nitrogen as main components, the ceramic material having, as a main phase, an MgO—AlN solid solution crystal phase obtained by dissolving aluminum nitride in magnesium oxide.
Abstract translation: 静电吸盘（1A〜1F）设有：具有吸引并保持半导体的吸附面（11a）的感受体（11A〜11F） 和静电吸盘电极（4）。 基座设有板状体（3）和面向吸引面的表面耐腐蚀层（2）。 表面耐腐蚀层（2）由具有镁，铝，氧和氮的陶瓷材料作为主要成分，陶瓷材料以MgO-AlN固溶体结晶相为主要成分，所述MgO-AlN固溶体结晶相通过将氮化铝 在氧化镁中。
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Patent Agency Ranking
公开(公告)号：US20210384300A1
公开(公告)日：2021-12-09
申请号：US17445617
申请日：2021-08-23
Applicant: NGK INSULATORS, LTD.
Inventor： Kiyoshi MATSUSHIMA , Jun YOSHIKAWA , Morimichi WATANABE , Risa MIYAKAZE
Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.
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公开(公告)号：US20180190527A1
公开(公告)日：2018-07-05
申请号：US15903175
申请日：2018-02-23
Applicant: NGK INSULATORS, LTD.
Inventor： Morimichi WATANABE , Tsutomu NANATAKI
IPC: H01L21/683 , C04B35/111 , C04B35/101 , C04B35/634 , C04B35/64
CPC classification number: H01L21/6833 , B32B18/00 , C04B35/101 , C04B35/111 , C04B35/1115 , C04B35/6262 , C04B35/6264 , C04B35/6342 , C04B35/638 , C04B35/64 , C04B35/645 , C04B37/005 , C04B2235/3206 , C04B2235/3217 , C04B2235/322 , C04B2235/3262 , C04B2235/445 , C04B2235/5292 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/6025 , C04B2235/6567 , C04B2235/6586 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/787 , C04B2235/96 , C04B2235/963 , C04B2237/064 , C04B2237/343 , C04B2237/52 , H01L21/6831 , H01L21/68757
Abstract: An electrostatic chuck includes a dielectric layer including an oriented alumina sintered body having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained by the irradiation of an X-ray in the 2θ range of 20° to 70°; a ceramic layer integrated with a surface disposed opposite a wafer placement surface of the dielectric layer; and an electrostatic electrode between the dielectric layer and the ceramic layer.
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公开(公告)号：US20180179664A1
公开(公告)日：2018-06-28
申请号：US15902266
申请日：2018-02-22
Applicant: NGK INSULATORS, LTD.
Inventor： Morimichi WATANABE , Kei SATO , Kiyoshi MATSUSHIMA , Tsutomu NANATAKI
CPC classification number: C30B29/20 , C04B35/111 , C04B35/622 , C04B35/6342 , C04B35/638 , C04B35/645 , C04B2235/3206 , C04B2235/5292 , C04B2235/60 , C04B2235/6025 , C04B2235/6567 , C04B2235/6586 , C04B2235/72 , C04B2235/727 , C04B2235/728 , C04B2235/786 , C04B2235/787 , C30B1/12 , C30B19/02 , C30B19/12 , C30B25/18 , C30B25/183 , C30B28/02 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/6835 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01L2221/68345 , H01L2221/6835
Abstract: An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.
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9.发明申请公开(公告)号：US20160293800A1
公开(公告)日：2016-10-06
申请号：US15182741
申请日：2016-06-15
Applicant: NGK INSULATORS, LTD.
Inventor： Morimichi WATANABE , Jun YOSHIKAWA , Tsutomu NANATAKI , Katsuhiro IMAI , Tomohiko SUGIYAMA , Takashi YOSHINO , Yukihisa TAKEUCHI , Kei SATO
CPC classification number: H01L33/16 , C30B9/10 , C30B19/02 , C30B25/18 , C30B25/183 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02554 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L33/0008 , H01L33/0025 , H01L33/0066 , H01L33/0075 , H01L33/06 , H01L33/32
Abstract: Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.
Abstract translation: 提供了一种适合于以低成本制造大面积发光器件的发光器件复合衬底。 发光器件复合衬底包括由取向多晶氧化铝烧结体构成的衬底和形成在衬底上并具有由半导体单晶晶粒组成的两层或更多层的发光功能层，其中两层或更多层中的每一层具有 在大致垂直于衬底的方向上的单晶结构。
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10.发明申请POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME 有权多晶硅氮化物自支撑基板和使用相同的发光元件公开(公告)号：US20160197234A1
公开(公告)日：2016-07-07
申请号：US15072745
申请日：2016-03-17
Applicant: NGK INSULATORS, LTD.
Inventor： Morimichi WATANABE , Jun YOSHIKAWA , Yoshitaka KURAOKA , Tsutomu NANATAKI
CPC classification number: H01L33/18 , C30B9/00 , C30B9/12 , C30B19/02 , C30B19/12 , C30B25/18 , C30B25/20 , C30B28/04 , C30B29/406 , C30B29/605 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/32
Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.
Abstract translation: 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。
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