公开(公告)号：US20200216364A1

公开(公告)日：2020-07-09

申请号：US16818025

申请日：2020-03-13

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Takahiro MAEDA ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI

IPC分类号： C04B35/645 ,  C04B35/111

摘要： An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm2, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a maximum profile height Pt of 0.8 μm or less.

公开(公告)号：US20170077349A1

公开(公告)日：2017-03-16

申请号：US15359813

申请日：2016-11-23

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Yoshitaka KURAOKA ,  Tsutomu NANATAKI

IPC分类号： H01L33/18 ,  H01L33/00 ,  H01L33/06 ,  C30B19/02 ,  C30B29/40 ,  C30B25/18 ,  C30B9/12 ,  C30B28/04 ,  C30B29/60 ,  H01L33/32 ,  C30B19/12

CPC分类号： H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

摘要： Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

摘要翻译： 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。

公开(公告)号：US20130235507A1

公开(公告)日：2013-09-12

申请号：US13869285

申请日：2013-04-24

申请人： NGK INSULATORS, LTD.

发明人： Kenichiro AIKAWA ,  Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3865 ,  C04B2235/3869 ,  C04B2235/5445 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9669 ,  C23C14/3414

摘要： Electrostatic chucks (1A to 1F) are provided with: susceptors (11A to 11F) having an attracting surface (11a) that attracts and holds semiconductors; and electrostatic chuck electrodes (4) that are embedded in the susceptors. The susceptors are provided with plate-shape bodies (3) and surface corrosion-resistant layers (2) that face the attracting surface. The surface corrosion-resistant layer (2) is made from a ceramic material having magnesium, aluminum, oxygen and nitrogen as main components, the ceramic material having, as a main phase, an MgO—AlN solid solution crystal phase obtained by dissolving aluminum nitride in magnesium oxide.

摘要翻译： 静电吸盘（1A〜1F）设有：具有吸引并保持半导体的吸附面（11a）的感受体（11A〜11F） 和静电吸盘电极（4）。 基座设有板状体（3）和面向吸引面的表面耐腐蚀层（2）。 表面耐腐蚀层（2）由具有镁，铝，氧和氮的陶瓷材料作为主要成分，陶瓷材料以MgO-AlN固溶体结晶相为主要成分，所述MgO-AlN固溶体结晶相通过将氮化铝 在氧化镁中。

公开(公告)号：US20210384300A1

公开(公告)日：2021-12-09

申请号：US17445617

申请日：2021-08-23

申请人： NGK INSULATORS, LTD.

发明人： Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA ,  Morimichi WATANABE ,  Risa MIYAKAZE

IPC分类号： H01L29/16 ,  C30B29/36 ,  H01L21/02

摘要： Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.

公开(公告)号：US20180190527A1

公开(公告)日：2018-07-05

申请号：US15903175

申请日：2018-02-23

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Tsutomu NANATAKI

IPC分类号： H01L21/683 ,  C04B35/111 ,  C04B35/101 ,  C04B35/634 ,  C04B35/64

CPC分类号： H01L21/6833 ,  B32B18/00 ,  C04B35/101 ,  C04B35/111 ,  C04B35/1115 ,  C04B35/6262 ,  C04B35/6264 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/64 ,  C04B35/645 ,  C04B37/005 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/322 ,  C04B2235/3262 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/787 ,  C04B2235/96 ,  C04B2235/963 ,  C04B2237/064 ,  C04B2237/343 ,  C04B2237/52 ,  H01L21/6831 ,  H01L21/68757

摘要： An electrostatic chuck includes a dielectric layer including an oriented alumina sintered body having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained by the irradiation of an X-ray in the 2θ range of 20° to 70°; a ceramic layer integrated with a surface disposed opposite a wafer placement surface of the dielectric layer; and an electrostatic electrode between the dielectric layer and the ceramic layer.

公开(公告)号：US20180179664A1

公开(公告)日：2018-06-28

申请号：US15902266

申请日：2018-02-22

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Tsutomu NANATAKI

IPC分类号： C30B29/20 ,  H01L33/00 ,  H01L21/02 ,  H01L21/683 ,  C30B29/40 ,  C30B19/02 ,  C30B25/18

CPC分类号： C30B29/20 ,  C04B35/111 ,  C04B35/622 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/60 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/727 ,  C04B2235/728 ,  C04B2235/786 ,  C04B2235/787 ,  C30B1/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/183 ,  C30B28/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/6835 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2221/68345 ,  H01L2221/6835

摘要： An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

公开(公告)号：US20160293800A1

公开(公告)日：2016-10-06

申请号：US15182741

申请日：2016-06-15

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI ,  Kei SATO

IPC分类号： H01L33/16 ,  C30B9/10 ,  H01L33/00 ,  C30B29/40 ,  H01L33/32 ,  H01L33/06 ,  C30B25/18 ,  C30B19/02

CPC分类号： H01L33/16 ,  C30B9/10 ,  C30B19/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L33/0008 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32

摘要： Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

摘要翻译： 提供了一种适合于以低成本制造大面积发光器件的发光器件复合衬底。 发光器件复合衬底包括由取向多晶氧化铝烧结体构成的衬底和形成在衬底上并具有由半导体单晶晶粒组成的两层或更多层的发光功能层，其中两层或更多层中的每一层具有 在大致垂直于衬底的方向上的单晶结构。

公开(公告)号：US20160197234A1

公开(公告)日：2016-07-07

申请号：US15072745

申请日：2016-03-17

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Yoshitaka KURAOKA ,  Tsutomu NANATAKI

IPC分类号： H01L33/18 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

摘要： Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

摘要翻译： 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。

公开(公告)号：US20150372191A1

公开(公告)日：2015-12-24

申请号：US14737627

申请日：2015-06-12

申请人： NGK Insulators, Ltd.

发明人： Morimichi WATANABE ,  Katsuhiro IMAI ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI

IPC分类号： H01L33/16 ,  H01L33/00 ,  H01L33/26 ,  H01L33/28 ,  H01L33/32

CPC分类号： H01L33/16 ,  H01L33/0008 ,  H01L33/0083 ,  H01L33/0095 ,  H01L33/26 ,  H01L33/28 ,  H01L33/285 ,  H01L33/325

摘要： Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.

摘要翻译： 提供一种面发光器件，其包括由板状取向多晶氧化锌烧结体构成的衬底，设置在衬底上的发光功能层和设置在发光功能层上的电极。 根据本发明，可以廉价地提供发光效率高的面发光装置。

公开(公告)号：US20130220988A1

公开(公告)日：2013-08-29

申请号：US13863729

申请日：2013-04-16

申请人： NGK INSULATORS, LTD.

发明人： Nobuyuki KONDO ,  Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA

IPC分类号： H05B1/00

CPC分类号： H01L21/67 ,  B32B18/00 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C23C14/3414 ,  H01L21/6831 ,  H05B1/00 ,  H05B3/283 ,  Y10T428/24942

摘要： A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.

摘要翻译： 加热装置包括具有加热半导体的加热面的基座和与基座的背面接合的支撑部。 感受体包括以镁，铝，氧和氮为主要成分的陶瓷材料。 该材料包括主相，其包含通过CuKαX射线显示出至少2θ= 47°至50°的XRD峰的镁 - 铝氧氮化物相。