公开(公告)号：US20200216364A1

公开(公告)日：2020-07-09

申请号：US16818025

申请日：2020-03-13

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Takahiro MAEDA ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI

IPC分类号： C04B35/645 ,  C04B35/111

摘要： An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm2, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a maximum profile height Pt of 0.8 μm or less.

公开(公告)号：US20180230020A1

公开(公告)日：2018-08-16

申请号：US15909002

申请日：2018-03-01

申请人： NGK INSULATORS, LTD.

发明人： Kiyoshi MATSUSHIMA ,  Morimichi Watanabe ,  Kei Sato ,  Tsutomu Nanataki

IPC分类号： C01F7/02

CPC分类号： C01F7/02 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/02 ,  C01P2006/16 ,  C04B35/115 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/724 ,  C04B2235/786 ,  C04B2235/787 ,  G02B1/02 ,  H01L33/007 ,  H01L33/0087

摘要： An alumina sintered body of the present invention has a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2θ=20° to 70° obtained under X-ray irradiation, and an XRC half width of 15.0° or less in rocking curve measurement, an F content of less than 0.99 mass ppm when measured by D-SIMS, a crystal grain diameter of 15 to 200 μm, and 25 or less pores having a diameter of 0.2 μm to 1.0 μm when a photograph of a viewing area 370.0 μm in a vertical direction and 372.0 μm in a horizontal direction taken at a magnification factor of 1000 is visually observed.

公开(公告)号：US20210384300A1

公开(公告)日：2021-12-09

申请号：US17445617

申请日：2021-08-23

申请人： NGK INSULATORS, LTD.

发明人： Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA ,  Morimichi WATANABE ,  Risa MIYAKAZE

IPC分类号： H01L29/16 ,  C30B29/36 ,  H01L21/02

摘要： Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.

公开(公告)号：US20180179664A1

公开(公告)日：2018-06-28

申请号：US15902266

申请日：2018-02-22

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Tsutomu NANATAKI

IPC分类号： C30B29/20 ,  H01L33/00 ,  H01L21/02 ,  H01L21/683 ,  C30B29/40 ,  C30B19/02 ,  C30B25/18

CPC分类号： C30B29/20 ,  C04B35/111 ,  C04B35/622 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/60 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/727 ,  C04B2235/728 ,  C04B2235/786 ,  C04B2235/787 ,  C30B1/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/183 ,  C30B28/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/6835 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2221/68345 ,  H01L2221/6835

摘要： An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

公开(公告)号：US20140011667A1

公开(公告)日：2014-01-09

申请号：US14022588

申请日：2013-09-10

申请人： NGK INSULATORS, LTD.

发明人： Takahiro TOMITA ,  Kiyoshi MATSUSHIMA ,  Katsuhiro INOUE ,  Yoshimasa KOBAYASHI

IPC分类号： B01J29/06

CPC分类号： B01J29/06 ,  B01D53/944 ,  B01J23/38 ,  B01J35/002 ,  B01J35/04 ,  C04B35/565 ,  C04B35/6316 ,  C04B38/0006 ,  C04B2111/0081 ,  C04B2235/3481 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/80 ,  C04B38/0074

摘要： A silicon carbide porous body according to the present invention contains silicon carbide particles, metallic silicon, and an oxide phase, in which the silicon carbide particles are bonded together via at least one of the metallic silicon and the oxide phase. The primary component of the oxide phase is cordierite, and the open porosity is 10% to 40%. Preferably, the silicon carbide porous body contains 50% to 80% by weight of silicon carbide, 15% to 40% by weight of metallic silicon, and 1% to 25% by weight of cordierite. Preferably, the volume resistivity is 1 to 80 Ωcm, and the thermal conductivity is 30 to 70 W/m·K.

摘要翻译： 根据本发明的碳化硅多孔体包含碳化硅颗粒，金属硅和氧化物相，其中碳化硅颗粒通过金属硅和氧化物相中的至少一种结合在一起。 氧化物相的主要成分是堇青石，开孔率为10〜40％。 优选地，碳化硅多孔体含有50重量％至80重量％的碳化硅，15重量％至40重量％的金属硅和1重量％至25重量％的堇青石。 体积电阻率优选为1〜80Ω·cm，导热率为30〜70W / m·K。

公开(公告)号：US20220328310A1

公开(公告)日：2022-10-13

申请号：US17805234

申请日：2022-06-03

申请人： NGK Insulators, Ltd.

发明人： Kiyoshi MATSUSHIMA ,  Morimichi WATANABE ,  Jun YOSHIKAWA

IPC分类号： H01L21/02

摘要： A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×1016 atoms/cm3 to 1×1019 atoms/cm3 inclusive and a concentration of Al is from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 inclusive.

公开(公告)号：US20220278206A1

公开(公告)日：2022-09-01

申请号：US17663229

申请日：2022-05-13

申请人： NGK Insulators, Ltd.

发明人： Morimichi WATANABE ,  Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA

IPC分类号： H01L29/16 ,  H01L29/04

摘要： A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×1016 atoms/cm3 or more and 1×1019 atoms/cm3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

公开(公告)号：US20170174574A1

公开(公告)日：2017-06-22

申请号：US15447670

申请日：2017-03-02

申请人： NGK INSULATORS, LTD.

发明人： Kiyoshi MATSUSHIMA ,  Morimichi WATANABE ,  Kei SATO ,  Tsutomu NANATAKI

IPC分类号： C04B35/115 ,  C01F7/30 ,  C04B35/634 ,  C04B35/632 ,  C30B1/10 ,  C04B35/638 ,  C04B35/645 ,  C30B1/04 ,  C30B29/20 ,  C01F7/02 ,  C04B35/63

CPC分类号： C04B35/115 ,  C01F7/02 ,  C01F7/30 ,  C01F7/441 ,  C01F7/442 ,  C01P2002/72 ,  C01P2004/20 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2006/80 ,  C04B35/6268 ,  C04B35/6303 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/322 ,  C04B2235/3418 ,  C04B2235/425 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/612 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/725 ,  C04B2235/77 ,  C04B2235/787 ,  C04B2235/9653 ,  C04B2235/9692 ,  C30B1/04 ,  C30B1/10 ,  C30B1/12 ,  C30B28/02 ,  C30B29/20 ,  G02B1/00 ,  H01L33/0079 ,  H01L33/28 ,  H01L33/32

摘要： An alumina sintered body according to the present invention has a degree of c-plane orientation of 90% or more as determined by Lotgering's method from an X-ray diffraction profile obtained by irradiating a plate surface with X-rays in a range of 2θ=20° to 70°. The alumina sintered body has no pores when a cross-sectional surface formed in a direction perpendicular to the plate surface is polished using an Ar+ ion beam and a mask and is examined under a scanning electron microscope at a magnification of 5,000 times. The alumina sintered body has a total mass fraction of impurity elements other than Mg and C of 100 ppm or less. This alumina sintered body has a high degree of orientation, high density, and high purity and thus has a higher optical translucency than those known in the art.

公开(公告)号：US20170166484A1

公开(公告)日：2017-06-15

申请号：US15446416

申请日：2017-03-01

申请人： NGK INSULATORS, LTD.

发明人： Kiyoshi MATSUSHIMA ,  Morimichi WATANABE ,  Kei SATO ,  Tsutomu NANATAKI

IPC分类号： C04B35/115 ,  C04B35/645

CPC分类号： C04B35/115 ,  C01F7/442 ,  C01P2004/22 ,  C01P2004/54 ,  C01P2006/80 ,  C04B35/6262 ,  C04B35/62675 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/322 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/602 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/6586 ,  C04B2235/668 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/724 ,  C04B2235/725 ,  C04B2235/787 ,  C04B2235/9623 ,  C04B2235/9653

摘要： A method for producing a transparent alumina sintered body includes (a) the step of preparing an alumina raw material powder containing a plate-like alumina powder having an aspect ratio of 3 or more so that the mass ratio R1 of F to Al in the alumina raw material powder is 5 ppm or more, and forming a compaction raw material containing the alumina raw material powder into a compact, and (b) the step of pressure-sintering the compact at a temperature at which F evaporate to yield a transparent alumina sintered body.

公开(公告)号：US20240250127A1

公开(公告)日：2024-07-25

申请号：US18441143

申请日：2024-02-14

申请人： NGK INSULATORS, LTD.

发明人： Risa MIYAKAZE ,  Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA

IPC分类号： H01L29/16

CPC分类号： H01L29/1608

摘要： Provided is a rare earth-containing SiC substrate including a biaxially oriented SiC layer wherein a ratio of a concentration CB of B to a concentration CRE of a rare earth element, CB/CRE, is 1.0×10−2 to 1.0×105.