公开(公告)号：US20200216364A1

公开(公告)日：2020-07-09

申请号：US16818025

申请日：2020-03-13

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Takahiro MAEDA ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI

IPC: C04B35/645 ,  C04B35/111

Abstract: An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm2, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a maximum profile height Pt of 0.8 μm or less.

公开(公告)号：US20180230020A1

公开(公告)日：2018-08-16

申请号：US15909002

申请日：2018-03-01

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi MATSUSHIMA ,  Morimichi Watanabe ,  Kei Sato ,  Tsutomu Nanataki

IPC: C01F7/02

CPC classification number: C01F7/02 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/02 ,  C01P2006/16 ,  C04B35/115 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/724 ,  C04B2235/786 ,  C04B2235/787 ,  G02B1/02 ,  H01L33/007 ,  H01L33/0087

Abstract: An alumina sintered body of the present invention has a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2θ=20° to 70° obtained under X-ray irradiation, and an XRC half width of 15.0° or less in rocking curve measurement, an F content of less than 0.99 mass ppm when measured by D-SIMS, a crystal grain diameter of 15 to 200 μm, and 25 or less pores having a diameter of 0.2 μm to 1.0 μm when a photograph of a viewing area 370.0 μm in a vertical direction and 372.0 μm in a horizontal direction taken at a magnification factor of 1000 is visually observed.

公开(公告)号：US20210384300A1

公开(公告)日：2021-12-09

申请号：US17445617

申请日：2021-08-23

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA ,  Morimichi WATANABE ,  Risa MIYAKAZE

IPC: H01L29/16 ,  C30B29/36 ,  H01L21/02

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.

公开(公告)号：US20180179664A1

公开(公告)日：2018-06-28

申请号：US15902266

申请日：2018-02-22

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Tsutomu NANATAKI

IPC: C30B29/20 ,  H01L33/00 ,  H01L21/02 ,  H01L21/683 ,  C30B29/40 ,  C30B19/02 ,  C30B25/18

CPC classification number: C30B29/20 ,  C04B35/111 ,  C04B35/622 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/60 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/727 ,  C04B2235/728 ,  C04B2235/786 ,  C04B2235/787 ,  C30B1/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/183 ,  C30B28/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/6835 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2221/68345 ,  H01L2221/6835

Abstract: An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

公开(公告)号：US20140011667A1

公开(公告)日：2014-01-09

申请号：US14022588

申请日：2013-09-10

Applicant: NGK INSULATORS, LTD.

Inventor： Takahiro TOMITA ,  Kiyoshi MATSUSHIMA ,  Katsuhiro INOUE ,  Yoshimasa KOBAYASHI

IPC: B01J29/06

CPC classification number: B01J29/06 ,  B01D53/944 ,  B01J23/38 ,  B01J35/002 ,  B01J35/04 ,  C04B35/565 ,  C04B35/6316 ,  C04B38/0006 ,  C04B2111/0081 ,  C04B2235/3481 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/80 ,  C04B38/0074

Abstract: A silicon carbide porous body according to the present invention contains silicon carbide particles, metallic silicon, and an oxide phase, in which the silicon carbide particles are bonded together via at least one of the metallic silicon and the oxide phase. The primary component of the oxide phase is cordierite, and the open porosity is 10% to 40%. Preferably, the silicon carbide porous body contains 50% to 80% by weight of silicon carbide, 15% to 40% by weight of metallic silicon, and 1% to 25% by weight of cordierite. Preferably, the volume resistivity is 1 to 80 Ωcm, and the thermal conductivity is 30 to 70 W/m·K.

Abstract translation: 根据本发明的碳化硅多孔体包含碳化硅颗粒，金属硅和氧化物相，其中碳化硅颗粒通过金属硅和氧化物相中的至少一种结合在一起。 氧化物相的主要成分是堇青石，开孔率为10〜40％。 优选地，碳化硅多孔体含有50重量％至80重量％的碳化硅，15重量％至40重量％的金属硅和1重量％至25重量％的堇青石。 体积电阻率优选为1〜80Ω·cm，导热率为30〜70W / m·K。

公开(公告)号：US20240250127A1

公开(公告)日：2024-07-25

申请号：US18441143

申请日：2024-02-14

Applicant: NGK INSULATORS, LTD.

Inventor： Risa MIYAKAZE ,  Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA

IPC: H01L29/16

CPC classification number: H01L29/1608

Abstract: Provided is a rare earth-containing SiC substrate including a biaxially oriented SiC layer wherein a ratio of a concentration CB of B to a concentration CRE of a rare earth element, CB/CRE, is 1.0×10−2 to 1.0×105.

公开(公告)号：US20210384145A1

公开(公告)日：2021-12-09

申请号：US17445505

申请日：2021-08-20

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA ,  Morimichi WATANABE ,  Risa MIYAKAZE

IPC: H01L23/00 ,  H01L29/04 ,  H01L29/32 ,  H01L29/16

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. Pores are present in the SiC composite substrate.

公开(公告)号：US20180179665A1

公开(公告)日：2018-06-28

申请号：US15902294

申请日：2018-02-22

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Tsutomu NANATAKI

IPC: C30B29/20 ,  H01L33/00 ,  H01L21/02 ,  H01L21/683 ,  C30B25/18 ,  C30B19/02 ,  C01F7/02

CPC classification number: C30B29/20 ,  C01F7/02 ,  C01P2002/54 ,  C04B35/111 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/727 ,  C04B2235/728 ,  C04B2235/786 ,  C04B2235/787 ,  C30B1/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/183 ,  C30B28/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/6835 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2221/68345 ,  H01L2221/6835

Abstract: An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.

公开(公告)号：US20180044195A1

公开(公告)日：2018-02-15

申请号：US15797127

申请日：2017-10-30

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi MATSUSHIMA ,  Morimichi Watanabe ,  Kei Sato ,  Tsutomu Nanataki

IPC: C01F7/02

CPC classification number: C01F7/02 ,  C01F7/442 ,  C01P2002/60 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/22 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2006/14 ,  C01P2006/16 ,  C01P2006/60 ,  C01P2006/80 ,  C04B35/115 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/322 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/72 ,  C04B2235/725 ,  C04B2235/786 ,  C04B2235/787 ,  C04B2235/788 ,  G01N23/207 ,  G02B1/02

Abstract: An alumina sintered body according to the present invention includes a surface having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained through X-ray irradiation at 2θ=20° to 70°. The alumina sintered body contains Mg and F, a Mg/F mass ratio is 0.05 to 3500, and a Mg content is 30 to 3500 ppm by mass. The alumina sintered body has a crystal grain size of 15 to 200 μm. When a field of view of 370.0 μm long×372.0 μm wide is photographed with a 1000-fold magnification and the photograph is visually observed, a number of pores having a diameter of 0.2 to 0.6 μm is 250 or less.

公开(公告)号：US20250126865A1

公开(公告)日：2025-04-17

申请号：US18989246

申请日：2024-12-20

Applicant: NGK INSULATORS, LTD.

Inventor： Yuki URATA ,  Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA

IPC: H10D62/832 ,  C30B29/36

Abstract: There is provided a SiC substrate including a biaxially oriented SiC layer, and the SiC substrate and the biaxially oriented SiC layer have an off angle. With regard to this SiC substrate, in an XRT image obtained by subjecting a certain 4 mm-square region in the biaxially oriented SiC layer to X-ray topography (XRT) measurement, with respect to a total number of basal plane dislocations (BPD), a percentage of the number of BPDs such that an absolute value of an acute angle between a BPD extension direction and the [11-20] direction is 15° or less is 60% or more. The BPD extension direction is defined as a direction of a line segment connecting an end point of a BPD observed as a linear shape and a point 150 μm away from the end point along the linear BPD in the XRT image.